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Clusters and the Nature of Superconductivity in Ltmbe-GaAs

Published online by Cambridge University Press:  22 February 2011

N.A. Bert
Affiliation:
Ioffe Physico-Technical Institute, 194021 St.Petersburg, Russia
V.V. Chaldyshev
Affiliation:
Ioffe Physico-Technical Institute, 194021 St.Petersburg, Russia
S.I. Goloshchapov
Affiliation:
Ioffe Physico-Technical Institute, 194021 St.Petersburg, Russia
S.V. Kozyrev
Affiliation:
Ioffe Physico-Technical Institute, 194021 St.Petersburg, Russia
A.E. Kunitsyn
Affiliation:
Ioffe Physico-Technical Institute, 194021 St.Petersburg, Russia
V.V. Tretyakov
Affiliation:
Ioffe Physico-Technical Institute, 194021 St.Petersburg, Russia
A.I. Veinger
Affiliation:
Ioffe Physico-Technical Institute, 194021 St.Petersburg, Russia
I.V. Ivonin
Affiliation:
Siberian Physico-Technical Institute, 634050 Tomsk, Russia
L.G. Lavrentieva
Affiliation:
Siberian Physico-Technical Institute, 634050 Tomsk, Russia
M.D. Vilisova
Affiliation:
Siberian Physico-Technical Institute, 634050 Tomsk, Russia
M.P. Yakubenya
Affiliation:
Siberian Physico-Technical Institute, 634050 Tomsk, Russia
D.I. Lubyshev
Affiliation:
Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
V.V. Preobrazhenskii
Affiliation:
Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
B.R. Semyagin
Affiliation:
Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
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Abstract

The structure and properties of GaAs layers grown by molecular-beam epitaxy at low temperature (150-250 °C) have been studied. The samples were found to contain up to 1.5 at.% extra As, which formed nano-scale clusters under annealing. The dependences of the excessive As concentration and As-cluster size and density on the growth and annealing conditions were established. LT-GaAs layers were found to have high electrical resistivity, however, our investigations of microwave absorption in a weak magnetic field revealed a characteristic signal usually attributed to the superconducting phase. It has been proved that this microwave absorption is unlikely to be due to either the arsenic clusters in LT-GaAs films or indium in the substrate, as it was assumed previously. We suggest a new hypothesis that the superconducting phase in LT-GaAs is Ga nanoclusters formed on the growth surface.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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