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Characterization of Ta2O5 Thin Films With Small Current Leakage for High Density DRAMS

Published online by Cambridge University Press:  10 February 2011

N. Kanda
Affiliation:
Production Engineering Research Lab, Hitachi Ltd, 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan, kandan@perl.hitachi.co.jp
R. Furukawa
Affiliation:
Device Development Center, Hitachi Ltd, 6-16-3 Shinmachi, Tokyo 198-8512, Japan
M. Ishibashi
Affiliation:
Advanced Research Lab., Hitachi Ltd, 2520 Hatoyama-cho, Saitama 350-0395, Japan
M. Kunitomo
Affiliation:
Device Development Center, Hitachi Ltd, 6-16-3 Shinmachi, Tokyo 198-8512, Japan
T. Homma
Affiliation:
Semiconductor & IC Group, Hitachi Ltd, 5-20-1 Jyosui-honchou, Tokyo 185-8601, Japan
M. Takahashi
Affiliation:
Semiconductor & IC Group, Hitachi Ltd, 5-20-1 Jyosui-honchou, Tokyo 185-8601, Japan
T. Uemura
Affiliation:
Hitachi ULSI Systems Co., Ltd, 6-16-3 Shinmachi, Tokyo 198-8512, Japan
M. Kanai
Affiliation:
Device Development Center, Hitachi Ltd, 6-16-3 Shinmachi, Tokyo 198-8512, Japan
M. Kubo
Affiliation:
Device Development Center, Hitachi Ltd, 6-16-3 Shinmachi, Tokyo 198-8512, Japan
K. Ogata
Affiliation:
Production Engineering Research Lab, Hitachi Ltd, 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan, kandan@perl.hitachi.co.jp
T. Yoshida
Affiliation:
Semiconductor & IC Group, Hitachi Ltd, 5-20-1 Jyosui-honchou, Tokyo 185-8601, Japan
H. Yamamoto
Affiliation:
Device Development Center, Hitachi Ltd, 6-16-3 Shinmachi, Tokyo 198-8512, Japan
Y Ohji
Affiliation:
Device Development Center, Hitachi Ltd, 6-16-3 Shinmachi, Tokyo 198-8512, Japan
Corresponding
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Abstract

We have confirmed that grain boundaries are related to leakage problems in Ta2O5/SiON capacitors for high dielectric DRAMs. XRD studies using an intensity ratio of (200) to (001) showed that the crystallographic structure of Ta2O5 film was strongly dependent on preparation conditions. As the (200) oriented grains grew faster than the other grains, it became important to control its grain growth in forming uniform grain boundaries. TEM observation has shown that Ta2O5 film with a high intensity ratio of (200) to (001) was made up of large size grains and had SION interface intruding into grain boundaries. By using the current-mode AFM, we could monitor leakage current directly through grain boundaries on Ta2O5 film.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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Characterization of Ta2O5 Thin Films With Small Current Leakage for High Density DRAMS
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