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Characterization of PECVD Deposited Fluorosilicate Glass (FSG) After CMP and Cleaning

Published online by Cambridge University Press:  15 February 2011

D. Mordo
Affiliation:
Novellus Systems, Inc., San Jose, CA 95134
I. Goswami
Affiliation:
Novellus Systems, Inc., San Jose, CA 95134
I. J. Malik
Affiliation:
OnTrak Systems, Inc., Milpitas, CA 95035
T. Mallon
Affiliation:
OnTrak Systems, Inc., Milpitas, CA 95035
R. Emami
Affiliation:
OnTrak Systems, Inc., Milpitas, CA 95035
B. Withers
Affiliation:
OnTrak Systems, Inc., Milpitas, CA 95035
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Abstract

A characterization of Plasma-Enhanced CVD Fluorinated Silicate Glass (FSG) is presented. This study investigates the behavior of FSG film in the Chemical Mechanical Polishing (CMP) environment and compares those characteristics to undoped TEOS (UTEOS), Thermal Oxide and Si-Rich oxide capped FSG films. The removal rate, refractive index (RI), surface roughness, contact angle, water content by FTIR and thermal desorption spectroscopy (TDS) were studied.

The FSG films are polished ˜ 10% faster than the undoped PECVD oxide films. Their composition was slightly changed after CMP as can be seen by the minor increase in the RI. A layer of Si-Rich oxide (SRO) was found to have a stabilizing effect on the FSG film during CMP and post CMP cleaning operations, and thus can be used in the intermetal dielectric schemes that require low dielectric constant FSG layers.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

[1] Carl, D., Mordo, D., Sparks, B., Logan, M. and Ritter, J., Proceedings of the Twelfth International VLSI Multilevel Interconnect Conference (VMIC), (1995), p.97 Google Scholar
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[5] Mordo, D., Goswami, I., private communication (1996)Google Scholar
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