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Characterization of Nitride Thin Films by Electron Backscatter Diffraction and Electron Channeling Contrast Imaging

Published online by Cambridge University Press:  01 February 2011

Carol Trager-Cowan
Affiliation:
c.trager-cowan@strath.ac.uk, Strathclyde University, Physics, John Anderson Building,, 107 Rottenrow, Glasgow, N/A, G4 0NG, United Kingdom
Francis Sweeney
Affiliation:
.sweeney@phys.strath.ac.uk
A J Wilkinson
Affiliation:
noname@noname.com
P W Trimby
Affiliation:
noname@noname.com
A. P. Day
Affiliation:
HKL TECHNOLOGY A/S, Majsmarken 1, Hobro, DK 9500, Denmark
A Gholinia
Affiliation:
noname@noname.com
N-H Schmidt
Affiliation:
noname@noname.com
P J Parbrook
Affiliation:
noname@noname.com
I M Watson
Affiliation:
noname@noname.com
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Abstract

In this paper we describe the use of electron backscatter diffraction (EBSD) mapping and electron channeling contrast imaging—in the scanning electron microscope—to study tilt, atomic steps and dislocations in epitaxial GaN thin films. We show results from epitaxial GaN thin films and from a just coalesced epitaxial laterally overgrown GaN thin film. From our results we deduce that EBSD may be used to measure orientation changes of the order of 0.02°, in GaN thin films. As EBSD has a spatial resolution of ≈ 20 nm, this means we have a powerful technique with which to quantitatively map surface tilt. We also demonstrate that channeling contrast in electron channeling contrast images may be used to image tilt, atomic steps and threading dislocations in GaN thin films.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

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