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Characterization of MBE Grown GaAs With Isoelectronic Doping of Indium or Antimony

Published online by Cambridge University Press:  26 February 2011

A.Z. Li ,
H.K. Kim ,
J. Jeong ,
J. Zhao ,
T.E. Schlesinger  and
A.G. Milnes
A.Z. Li
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai, China, 200050
H.K. Kim
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh PA 15213
J. Jeong
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh PA 15213
J. Zhao
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh PA 15213
T.E. Schlesinger
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh PA 15213
A.G. Milnes
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh PA 15213
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Abstract

The effects of In and Sb on the concentration of electron traps in MBE grown n-type GaAs are investigated. Two traps, labeled M3 and M6, dominate the DLTS spectrum. It is observed that at growth temperatures of 500 and 550° C their concentrations can be reduced by up to two orders of magnitude by the introduction of a few atomic percent of either In or Sb. The percent In or Sb producing the lowest trap concentrations decreases with increasing substrate temperature and thus for a substrate growth temperature of 600° C no additional improvement in the deep trap concentration is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 497
Copyright
Copyright © Materials Research Society 1988

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References

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