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Characterization Of Grown-In Defects In CZ-SI Crystals By Bright Field IR Laser Interferometer

Published online by Cambridge University Press:  15 February 2011

Katsuhiko Nakai
Affiliation:
Advanced Technology Research Laboratories, Nippon Steel Corporation, 3434 Shimata, Hikari, Yamaguchi 743, Japan
Masami Hasebe
Affiliation:
Advanced Technology Research Laboratories, Nippon Steel Corporation, 3434 Shimata, Hikari, Yamaguchi 743, Japan
Toshio Iwasaki
Affiliation:
Manufacturing Department, NSC Electron Corporation, 3434 Shimata, Hikari, Yamaguchi 743, Japan
Yasuo Tsumori
Affiliation:
Manufacturing Department, NSC Electron Corporation, 3434 Shimata, Hikari, Yamaguchi 743, Japan
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Abstract

We have developed a quantitative measurement method for the number density, size and morphology of grown-in defects in czochralski-grown silicon (CZ-Si) crystals with a bright-field infrared-laser interferometer (known as Oxygen Precipitate Profiler; OPP). Using this method we investigated the effect of crystal cooling condition during crystal growth on the formation of grown-in defects by growth holding experiments. The relation between gate oxide integrity (GOI) and grown-in defects was studied. It was revealed that the grown-in defects have octahedral shape and degrade the GOI performance. We estimate the density as well as cumulative volume of the grown-in defects and discuss the formation mechanism of them.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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