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Characterization of Epitaxial Pb(Zrx,Ti1-x)O3 Thin Films with Composition Near the Morphotropic Phase Boundary

Published online by Cambridge University Press:  11 February 2011

Keisuke Saito
Affiliation:
PANalytical Application Laboratory, Sagamihara 228–0803, Japan
Toshiyuki Kurosawa
Affiliation:
PANalytical, Tokyo 108–0057, Japan
Takao Akai
Affiliation:
PANalytical, Tokyo 108–0057, Japan
Shintaro Yokoyama
Affiliation:
Tokyo Institute of Technology, Yokohama 226–8502, Japan
Hitoshi Morioka
Affiliation:
Tokyo Institute of Technology, Yokohama 226–8502, Japan
Takahiro Oikawa
Affiliation:
Tokyo Institute of Technology, Yokohama 226–8502, Japan
Hiroshi Funakubo
Affiliation:
Tokyo Institute of Technology, Yokohama 226–8502, Japan
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Abstract

200-nm-thick Pb(Zrx,Ti1-x)O3 (PZT) thin films with zirconium composition in the range from 0% to 65% were epitaxially grown on (001)c SrRuO3 (SRO)//SrTiO3 (STO) single crystal substrates by pulsed metalorganic chemical vapor deposition (pulsed MOCVD). Constituent crystallographic phases were characterized by high-resolution X-ray diffraction reciprocal space mapping. It was found that PZT thin films having zirconium composition from 45% to 60% show mixed tetragonal and pseudocubic phases and their lattice parameters remained constant in this composition range.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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