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Characterization of Diamond like Carbon film Fabricated by ECR Plasma CVD at room Temperature

Published online by Cambridge University Press:  10 February 2011

K. Kuramoto
Affiliation:
New Materials Research Center, Sanyo Electric Co., Ltd. 1-18-13 Hashiridani, Hirakata, Osaka 573, Japan
Y. Domoto
Affiliation:
New Materials Research Center, Sanyo Electric Co., Ltd. 1-18-13 Hashiridani, Hirakata, Osaka 573, Japan
H. Hirano
Affiliation:
New Materials Research Center, Sanyo Electric Co., Ltd. 1-18-13 Hashiridani, Hirakata, Osaka 573, Japan
H. Tarui
Affiliation:
New Materials Research Center, Sanyo Electric Co., Ltd. 1-18-13 Hashiridani, Hirakata, Osaka 573, Japan
S. Kiyama
Affiliation:
New Materials Research Center, Sanyo Electric Co., Ltd. 1-18-13 Hashiridani, Hirakata, Osaka 573, Japan
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Abstract

Low temperature (about 50°C) fabrication of diamond like carbon (DLC) films with a high hardness (>3000Hv) and a high electrical resistivity (>1011 Ωm) has been achieved.

In order to obtain such a result, the effect of ion impingement on the growth and structural change of DLC films in an electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD) method was investigated. It was confirmed that ion impingement was fundamentally required in the growth of DLC films. Furthermore, impingement with ions energized by bias voltages between 50V and 150V had a major influence on the sp 2/sp 3 configuration in DLC films. This configuration is found to be rather sensitive to optoelectronic properties but not so sensitive to film hardness.

Additionally, this method could fabricate ultrathin DLC films that exhibited excellent wear resistance for protective applications.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

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