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Characterization of Amorphous Silicon by Secondary Ion Mass Spectrometry

Published online by Cambridge University Press:  01 February 2011


Yupu Li
Affiliation:
Charles Evans & Associates, 810 Kifer Road, Sunnyvale, CA 94086, U.S.A.
Shaw Wang
Affiliation:
Charles Evans & Associates, 810 Kifer Road, Sunnyvale, CA 94086, U.S.A.
Xue-Feng Lin
Affiliation:
Charles Evans & Associates, 810 Kifer Road, Sunnyvale, CA 94086, U.S.A.
Luncun Wei
Affiliation:
Charles Evans & Associates, 810 Kifer Road, Sunnyvale, CA 94086, U.S.A.

Abstract

Based on various implanted standards, we have used SIMS (Secondary Ion Mass Spectrometry) to characterize amorphous Si thin films with high hydrogen content. SIMS and HFS (Hydrogen Forward Scattering) showed good agreement on the measured total H doses for H-implanted Si samples and the a-Si thin films. For the H-implanted Si samples, in the dose range of 2e15 atoms/cm2 to 2e17 atoms/cm2 (corresponding to peak H concentration from 0.32 at.% to 32 at.%), SIMS results showed that the calibration curve is a straight line. In other words, no correction for SIMS quantification is needed when moving from low to high hydrogen content samples. Analysis of P (Phosphorus) in a-Si thin films requires the use of high mass resolution magnetic sector SIMS to separate P and a mass interference from (30Si+H). Using a magnetic sector SIMS instrument, P-doped a-Si thin layers (˜ 50nm thick) were analyzed using 3keV O2 beam with oxygen leak for better depth resolution and improved detection limits. For the analysis of C, N, O in a-Si thin films (again approximately 50nm thick) the profiling energy typically needs to be lowered down to 3keV and the material needs to be sputtered at a high rate in order to reach real background levels. In this work, a-Si thin films were also analyzed using a 3keV Cs+ primary ion beam with (Cs2M)+ (M= C, N, O) detection for good depth resolution and detection limits.


Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

1 Amorphous and Heterogeneous Silicon Thin Films-2000, MRS Proceeding Volume 609, Eds. By Collins, R.W., Branz, H.M., Guha, S., Okamoto, H., and Stutzmann, M., Pittsburgh, PA.Google Scholar
2See, for example, Kuo, Y. and Suzuki, K., Editors, Guest, MRS Bulletin November 2002, Special Issue on Flat Panel Display Materials, Pittsburgh, PA, 2002.Google Scholar
3 Benninghoven, A., Rudenauer, G.G., and Werner, H.W., Secondary Ion Mass Spectrometry: Basic Concepts, Instrumental Aspects, Applications and Trends, John Wiley & Sons, 1987.Google Scholar
4 Wilson, R.G., Stevie, F.A., and Magee, C.W., Secondary Ion Mass Spectrometry: A practical Handbook for Depth Profiling and Bulk Impurity Analysis, John Wiley & Sons, 1989.Google Scholar
5See, for example, The CEA Online Tutorial on SIMS, www.cea.com, Charles Evans & Associates.Google Scholar
6SRIM computer code: Ziegler, J.F., Biersack, J.P., and Littmark, U., in The Stopping and Ranges of Ions in Solids (Pergamon, New Yoraks, 1985).Google Scholar

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