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Characterisation of Low Energy Boron Implantation and Fast Ramp-Up Rapid Thermal Annealing

Published online by Cambridge University Press:  10 February 2011

E. J. H. Collart
Affiliation:
Applied Materials, Implant Division. Foundry Lane, Horsham, W-Sussex RH13 5PY, England.
G. de Cock
Affiliation:
Applied Materials, Implant Division. Foundry Lane, Horsham, W-Sussex RH13 5PY, England.
A. J. Murrell
Affiliation:
Applied Materials, Implant Division. Foundry Lane, Horsham, W-Sussex RH13 5PY, England.
M. A. Foad
Affiliation:
Applied Materials, Implant Division. Foundry Lane, Horsham, W-Sussex RH13 5PY, England.
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Abstract

The effects of ramp-up rate during rapid thermal processing of ultra-shallow boron implants have been investigated. Ramp-up rates were varied between 25 °C and 200 °C for two types of anneals: soak anneals and spike anneals. It was found that the ramp-up rate had very little influence on junction depth or electrical activation for both types of anneals. Spike anneals did produce shallower profiles than soak anneal for a comparable electrical activation and may be an option for future processes.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

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