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Catalyst-Free GaN Nanowire Nucleation: Correlation of Temperature-Dependent Nanowire Orientation and Growth Matrix Changes

Published online by Cambridge University Press:  31 January 2011

Kaylee McElroy
Affiliation:
mcelro11@msu.edu
Virginia M Ayres
Affiliation:
ayresv@msu.edu, Michigan State University, East Lansing, Michigan, United States
Thomas R. Bieler
Affiliation:
bieler@egr.msu.edu
Benjamin W Jacobs
Affiliation:
bjacobs@sandia.gov, Sandia National Laboratories, Livermore, California, United States
Martin A Crimp
Affiliation:
crimp@egr.msu.edu, United States
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Abstract

Growth orientation and type of internal structures are both observed to change abruptly as a function of growth temperature in catalyst free growth of gallium nitride nanowires. In the present work, corresponding temperature-dependent changes in the growth matrix substrate that can affect the availability of nucleation sites and influence the reactivity of constituent adatom materials in catalyst-free nanowire growth are investigated. The influence of Ga vapor pressure and an abrupt change in the availability of single versus molecular adatom constituents is identified as a possible controlling parameter.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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References

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