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Carrier density in p-type ZnTe with nitrogen and copper doping

Published online by Cambridge University Press:  29 August 2013

Maryam Abazari
Affiliation:
GE Global Research Center 1 Research Circle, Niskayuna, NY 12309
Faisal R Ahmad
Affiliation:
GE Global Research Center 1 Research Circle, Niskayuna, NY 12309
Kamala C Raghavan
Affiliation:
GE Global Research Center 1 Research Circle, Niskayuna, NY 12309
James R Cournoyer
Affiliation:
GE Global Research Center 1 Research Circle, Niskayuna, NY 12309
Jae-Hyuk Her
Affiliation:
GE Global Research Center 1 Research Circle, Niskayuna, NY 12309
Robert Davis
Affiliation:
GE Global Research Center 1 Research Circle, Niskayuna, NY 12309
John Chera
Affiliation:
GE Global Research Center 1 Research Circle, Niskayuna, NY 12309
Vince Smentkowski
Affiliation:
GE Global Research Center 1 Research Circle, Niskayuna, NY 12309
Bas A Korevaar
Affiliation:
GE Global Research Center 1 Research Circle, Niskayuna, NY 12309
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Abstract

In this paper, we demonstrate deposition methods and conditions that allow the control of the electrical properties of doped ZnTe grown by RF magnetron sputtering using both nitrogen and copper as dopants. The carrier density of the films was characterized using a van der Pauw Hall effect measurement method. We demonstrate how the concentration of nitrogen in the plasma during the growth of the film impacts the conductivity of the ZnTe films. Films with hole concentrations in excess of 1018 cm-3 and a high degree of crystallinity were successfully grown. Similarly, we demonstrate that the hole concentration in the Cu-doped ZnTe can be varied by varying the amount of copper introduced in the films. We also observe that annealing the copper doped ZnTe films increases the carrier density, whereas annealing the nitrogen doped ZnTe films causes a decrease in carrier concentration and conductivity.

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Copyright
Copyright © Materials Research Society 2013 

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