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Carbon Rich a-Si1-xCx:H Films: An Investigation On Radiative Recombination Properties

Published online by Cambridge University Press:  10 February 2011

F. Giorgis
Affiliation:
Dipartimento di Fisica ed Unitá dell'Istituto Nazionale per la Fisica della Materia del Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Torino, Italy
F. Giuliani
Affiliation:
Dipartimento di Fisica ed Unitá dell'Istituto Nazionale per la Fisica della Materia del Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Torino, Italy
C.F. Pirri
Affiliation:
Dipartimento di Fisica ed Unitá dell'Istituto Nazionale per la Fisica della Materia del Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Torino, Italy
P. Mandracci
Affiliation:
Dipartimento di Elettronica ed Unitá. dell'Istituto Nazionale perla Fisica della Materia del Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Torino, Italy
P. Rava
Affiliation:
Elettrorava S.p.A., Via Don Sapino, Savonera Torino, Italy
R. Reitano
Affiliation:
Dipartimento di Fisica ed Unit, dell'Istituto Nazionale per ]a Fisica della Materia dell', Universiti di Catania, C.so Italia 57, Catania, Italy
L. Calcagno
Affiliation:
Dipartimento di Fisica ed Unit, dell'Istituto Nazionale per ]a Fisica della Materia dell', Universiti di Catania, C.so Italia 57, Catania, Italy
P. Musumeci
Affiliation:
Dipartimento di Fisica ed Unit, dell'Istituto Nazionale per ]a Fisica della Materia dell', Universiti di Catania, C.so Italia 57, Catania, Italy
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Abstract

Amorphous silicon-carbon a-Sil-xCx:H films with x in the range 0.3-1 have been deposited by PECVD of SiH4+CH4 and SiH4+C2H2 gas mixtures. Photoluminescence characterizations have been performed, together with optical measurements. The dependence of radiative recombination properties as a function of x and as a function of damage introduced by H+-ion irradiation has been presented and correlated with the changes in the absorption spectra.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

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