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Bias Stress Induced Instabilities in Amorphous Silicon Nitride / Crystalline Silicon and Amorphous Silicon Nitride / Amorphous Silicon Structures

Published online by Cambridge University Press:  21 February 2011


J. Kanicki
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O.Box 218, Yorktown Heights, NY 10598
C. Godet
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O.Box 218, Yorktown Heights, NY 10598
A. V. Gelatos
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O.Box 218, Yorktown Heights, NY 10598

Abstract

The effects of positive and negative bias stress on hydrogenated amorphous silicon nitride / crystalline silicon and hydrogenated amorphous silicon nitride / hydrogenated amorphous silicon (a-Si:H) structures are investigated as a function of stress time, stress temperature and stress bias. It is shown that in both structures bias stress induces a parallel shift of the C-V (capacitance-voltage) characteristics. For a given stress bias the direction of the C-V shift depends on the sign of the applied stress voltage, while the magnitude of the C-V shift depends on stress time and temperature. In addition, it is shown that positive bias stress slightly increases the number of localized states in the a-Si:H mobility gap, but negative bias stress does not. These results lead us to conclude that the C-V shift is not induced by dangling bond defects in a-Si:H but rather by carrier trapping in the insulator.


Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

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