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Bandgap Variation and Miscibility Gaps of Thallium-Based Pseudo-Binary Alloys

Published online by Cambridge University Press:  10 February 2011

A.-B. Chen  and
J. Piao
A.-B. Chen
Affiliation:
Physics Department, Auburn University, AL 36849, abchen@physics.aubum.edu
J. Piao
Affiliation:
Epitaxial Laboratory Inc., 25 E. Loop Rd., Stony Brook, NY 11790-3350
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Abstract

To stimulate further research on the TI-based semiconductor alloys for long-wave infrared (LWIR) application, we carried out detailed calculations for the variation of band gaps versus lattice constants and the alloy miscibility gaps of cation-substituted pseudo-binary alloys. These results are used to identify promising TI-based LWIR alloys and the lattice-matched non-TI bearing alloys for possible substrates and passivation caps. Although all the six Tl-bearing pseudo-binary alloys studied can have a 0.1 eV band gap, none of these systems are lattice matched to a pure III-V compound. Five of these six alloys can have a non-TI-bearing lattice-matched ternary alloy as the substrate, but only two do not have a serious problem with the miscibility gap. When further considering the difficulty of incorporating TI with a large concentration, the only promising LWIR pseudo-binary alloy left is In1−xTlxAs with x≍0. 16.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 297
Copyright
Copyright © Materials Research Society 2000

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