Article contents
The Atomistic and Quantum Mechanical Origins of Light-Induced Defects in a-Si
Published online by Cambridge University Press: 21 February 2011
Abstract
We present an atomistic and quantum mechanical model of light-induced defects (the Staebler-Wronski effect). The model is based in part on our observations of molecular dynamics simulations with an ab initio code and requires a change in the charge of a well localized state in the gap, such as a dangling bond, to nucleate the new defects. Besides the new defects, a substantial rearrangement of the supercell is observed.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1992
References
REFERENCES
- 1
- Cited by