Published online by Cambridge University Press: 10 February 2011
Aluminum nitride (AIN), silicon nitride (Si3N4), and silicon carbide (SIC) thin films have been snthesized using pulsed laser deposition (PLD) techniques. AIN and Si3N4 films were deposited on Si (100) substrates at different temperatures (room temperature to 600°C) and partial pressures (15 mTorr N2 to 200 mTorr N2). SiC films were deposited on Si (100) substrates at different temperatures (room temperature to 400°C) in high vacuum. The atomic force microscopy (AFM) is a useful tool for studying the surface topography of these technologically interesting thin film surfaces. This paper discusses in detail AFM analysis of thin film coatings.
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