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Atomic Force Microscopy and Spectroscopy of Self-Assembled InAsSb Quantum Dots grown on InP Substrates by MOCVD

Published online by Cambridge University Press:  26 February 2011


Yongkun Sin
Affiliation:
Electronics and Photonics Laboratory
Hyun I. Kim
Affiliation:
Electronics and Photonics Laboratory
Gary W. Stupian
Affiliation:
Electronics and Photonics Laboratory
Yueming Qiu
Affiliation:
Jet Propulsion Laboratory Pasadena, CA 91109–8099, USA

Abstract

InAsSb quantum dot (QD) lasers are promising light sources with emission wavelengths beyond 2μm as recently demonstrated. We report the first detailed atomic force microscope (AFM) characterization of uncapped InAsSb quantum dots self-assembled on GaAs/In0.53Ga0.47As layers. These quantum dot structures are grown on (100) InP substrates by metal organic chemical vapor deposition (MOCVD). Growth conditions are chosen to maximize photoluminescence intensity and to obtain high output powers from Fabry-Perot lasers with one stack of InAsSb QDs. Conductive AFM is employed to simultaneously study topography, current image, and current-voltage (I-V) characteristics from various InAs1-ySby QDs with y varied between 0 and 0.25. Typical dot density is 4–5×1010/cm2 and dots are estimated to have a lateral dimension at the base of ∼40nm and a height of 2–5nm. I-V characteristics measured from individual InAsSb QDs are compared to those from InAs QDs. Also reported are electronic properties including energy band gaps of InAs and InAsSb QDs.


Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

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Atomic Force Microscopy and Spectroscopy of Self-Assembled InAsSb Quantum Dots grown on InP Substrates by MOCVD
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