Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-12-04T04:23:00.576Z Has data issue: false hasContentIssue false

Ar+ Induced Interfacial Mixinc in the Pd/Cu Bilayer System

Published online by Cambridge University Press:  25 February 2011

H.K. Kim
Affiliation:
Korea Standards Research Institute, Taejon 305-606, Korea
J.H. Song
Affiliation:
Department of Physics, Yonsei University, Seoul 120–749, Korea
S.K. Kim
Affiliation:
Department of Physics, Yonsei University, Seoul 120–749, Korea
K. Jeong
Affiliation:
Department of Physics, Yonsei University, Seoul 120–749, Korea
C.N. Whang
Affiliation:
Department of Physics, Yonsei University, Seoul 120–749, Korea
R.J. Smith
Affiliation:
Department of Physics, Montana State University, Bozeman, MT 59717, U.S.A.
Get access

Abstract

Ion beam mixing of a Pd/Cu bilayer is studied using irradiation with 80 keV Ar+ ions at room temperature. RBS analysis shows that intermixing has occurred across the Pd/Cu interface, and that the mixing amount increases with increasing ion dose, which agrees well with a model for radiation enhanced diffusion. It is found that the Cu3Pd phase grows in a layer-by-layer manner.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Liu, B.X., Phys. Stat. Sol. (a) 24, 11 (1986).Google Scholar
2 Stritzker, B., Z. Phys. 268, 261 (1974).Google Scholar
3 Baranowski, B. and Skoskiewica, T.. in High Pressure and Low Temperature Physics edited by Chu, C.W. and Wollam, J.A. (Plenum Press, New York, 1978), p. 43.Google Scholar
4 Leiberich, A., Scholz, W., Standish, W.J. and Homan, CG., Phys. Lett. 87A, 57 (1981).Google Scholar
5 Scholz, W., Leiberich, A., Standish, W.J. and Homan, CG., Nucl. Instrum. Methods 209/210. 1019 (1983).Google Scholar
6 Smith, R.J., Whang, C.N., Mingde, Xu, Worthingotn, M., Hennessey, C., Kim, M. and Holland, M., Rev. Sei. Instrum. 58, 2284 (1987).Google Scholar
7 Kim, H.K., PhD thesis, Yonsei University, 1989.Google Scholar
8 Paine, B.M. and Averback, R.S., Nucl. Instrum. Methods B7/8. 666 (1985) and references therein.Google Scholar
9 Myers, S.M., Nucl. Instrum. Methods 168, 265 (1980).Google Scholar
10 Sigmund, P., Appl. Phys. Lett. 14, 114 (1969).Google Scholar
11 Lam, N.Q., Janghorban, K. and Ardell, A.J., J. Nucl. Mater. 101., 314 (1981).Google Scholar
12 Adams, J.B., Foiles, S.M., and Wolfer, W.G., J. Mater. Res. 4, 102 (1989).Google Scholar
13 Sigmund, P. and Grasmarti, A., Nucl. Instrum. Methods 182/183. 25 (1981).Google Scholar
14 Andersen, H.H., Appl. Phys. 18, 131 (1979).Google Scholar
15 Ziegler, J.F., Biersack, J.P. and Littmark, U., in The Stopping and Range of ions in Solids (Pergamon Press, New York, 1985).Google Scholar
16 Johnson, W.L., Cheng, Y.T., Van Rossum, M. and Nicolet, M-A., Nucl. Instrum. Methods B7/8. 657 (1985).Google Scholar
17 Miedema, A.R., Philips Techn. Rev. 36, 217 (1976).Google Scholar
18 Whang, C.N., Kim, S.K., Song, J.H. and Smith, R.J., to be published.Google Scholar
19 Hansen, M. and Anderko, K.. in Constitution of Binary Allovs (McGraw-Hill Book Co. New York, 1958), p. 612.Google Scholar
20 Villas, P. and Calvert, L.D. in Pearson's Handbook of Crystallographic Data for Intennetalic Phases (American Society for Metals, Metals Park, OH, 1985), p. 2000.Google Scholar