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Analysis of Reflection High Energy Electron Diffraction Pattern of Silicon Carbide Grown on Silicon

Published online by Cambridge University Press:  21 February 2011

G. Teichert ,
J. Pezoldt ,
V. Cimalla ,
O. Nennewitz  and
L. Spiess
G. Teichert
Affiliation:
TU Ilmenau, Institut für Werkstoffe, Postfach 0565, D-98684 Ilmenau, Germany
J. Pezoldt
Affiliation:
TU Ilmenau, Institut für Festkörperelektronik, Postfach 0565, D-98684 Ilmenau, Germany
V. Cimalla
Affiliation:
TU Ilmenau, Institut für Festkörperelektronik, Postfach 0565, D-98684 Ilmenau, Germany
O. Nennewitz
Affiliation:
TU Ilmenau, Institut für Werkstoffe, Postfach 0565, D-98684 Ilmenau, Germany
L. Spiess
Affiliation:
TU Ilmenau, Institut für Werkstoffe, Postfach 0565, D-98684 Ilmenau, Germany
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Abstract

RHEED pattern of SiC layers on both (100) and (111)Si grown by carbonization were studied. Different deviations from the single crystalline structure were found ranging from twinning up to changes in the orientation and textured growth. Special attention was drawn on lattice relaxation and morphology evolution during the growth of the formed SiC. Relationships between the occurrence of typical RHEED pattern and the morphology and process parameters are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 17
Copyright
Copyright © Materials Research Society 1996

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References

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Analysis of Reflection High Energy Electron Diffraction Pattern of Silicon Carbide Grown on Silicon
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