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Analysis of failure of C-V characteristics of MIS structure with SiO2 passivation layer deposited on InSb substrate via Raman spectroscopy

Published online by Cambridge University Press:  22 May 2014

Chulkyun Seok
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Korea.
Sujin Kim
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Korea.
Jaeyel Lee
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Korea.
Sehun Park
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Korea.
Yongjo Park
Affiliation:
Advanced Institutes of Convergence Technology, Seoul National University, Korea.
Euijoon Yoon
Affiliation:
Department of Materials Science and Engineering, Seoul National University, Korea.
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Abstract

The effect of interfacial phases on the electrical properties of Au/Ti/SiO2/InSb metal-insulator (oxide)-semiconductor (MIS or MOS) structures was investigated by capacitance-voltage (C-V) measurements. With increasing the deposition temperature of silicon oxide from 100 to 350°C using PECVD, the change in the interfacial phases between SiO2 and InSb were analyzed by resonant Raman spectroscopy to verify the relation between the breakdown of C-V characteristics and the change of interfacial phases. The shape of C-V characteristics was dramatically changed when the deposition temperature was above 300°C. The C-V measurements and Raman spectra represented that elemental Sb accumulation resulted from the chemical reaction of Sb oxide with InSb substrate was responsible for the failure in the C-V characteristics of MIS structure.

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Copyright
Copyright © Materials Research Society 2014 

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References

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Analysis of failure of C-V characteristics of MIS structure with SiO2 passivation layer deposited on InSb substrate via Raman spectroscopy
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