Skip to main content Accessibility help
×
Home

An Asymmetric Dual Gate Poly-Si TFTs for Improving Hot Carrier Stress Stability and Kink Effect Suppression

Published online by Cambridge University Press:  01 February 2011


Joong Hyun Park
Affiliation:
jhpark@emlab.snu.ac.kr, Seoul National University, School of Electrical Engineering (#50), San 56-1, Sillim-dong, Gwanak-gu, Seoul, N/A, 151-742, Korea, Republic of
Woo Jin Nam
Affiliation:
jintree@emlab.snu.ac.kr, Seoul National University, School of Electrical Engineering (#50), San 56-1, Sillim-dong, Gwanak-gu, Seoul, N/A, 151-742, Korea, Republic of
Jae Hoon Lee
Affiliation:
jhlee@emlab.snu.ac.kr, Seoul National University, School of Electrical Engineering (#50), San 56-1, Sillim-dong, Gwanak-gu, Seoul, N/A, 151-742, Korea, Republic of
Min Koo Han
Affiliation:
mkh@snu.ac.kr, Seoul National University, School of Electrical Engineering (#50), San 56-1, Sillim-dong, Gwanak-gu, Seoul, N/A, 151-742, Korea, Republic of

Abstract

An asymmetric dual gate poly-Si thin film transistors (TFTs), which is consist a long-gate TFT and a short-gate TFT, were fabricated in order to suppress the kink current and increase the reliability. The long-gate TFT operates in a linear regime and limits the total current flow by its current operation region. The asymmetric dual-gate does not exhibit from the kink current in a high drain bias due to the distribution of lateral electric field. The asymmetric dual-gate structure improves kink-free characteristics compared with conventional single and dual-gate TFTs. The hot-carrier stress reliability is successfully improved due to kink current suppression.


Type
Research Article
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Fossum, J. G., Ortiz-Conde, A., Schijo, H., and Banerjee, S. K., IEEE Trans. Electron Devices, Vol. 33, No. 10, pp. 15181528, 1986.Google Scholar
2. Colinge, J. P., IEEE Electron Device Lett., Vol. 9, pp. 9799, 1988.CrossRefGoogle Scholar
3. Yoo, J. S., Kim, C. H., Lee, M. C. and Han, M. K., IEDM Tech. Dig., pp. 217220, 2000.Google Scholar
4. Kim, J. H., Nam, W. J., Song, I. H., Park, J. H., Lee, M. C. and Han, M. K., Society for Information Displays (SID) Tech. Dig., pp. 284287, 2004.CrossRefGoogle Scholar
5. Colinge, J. P., IEEE Electron Device Lett., Vol. 9, pp. 9799, 1988.CrossRefGoogle Scholar
6. Kuo, P. Y., Chao, T. S., and Lei, T. F., IEEE Electron Device Lett. Vol. 25, No. 9, pp. 634636, 2004.CrossRefGoogle Scholar
7. Lee, M. C. and Han, M. K., IEEE Electron Devices Lett., Vol. 25, no. 1, pp 2527, 2004.CrossRefGoogle Scholar
8. Gao, M. H., Colinge, J. P., Lauwers, L., Wu, S. H., Claeys, C., IEEE SOS/SOI Technology Conf. pp. 1314, 1990.Google Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 4 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 3rd December 2020. This data will be updated every 24 hours.

Hostname: page-component-6c64649b67-wqrdf Total loading time: 0.281 Render date: 2020-12-03T12:12:03.172Z Query parameters: { "hasAccess": "0", "openAccess": "0", "isLogged": "0", "lang": "en" } Feature Flags last update: Thu Dec 03 2020 11:15:46 GMT+0000 (Coordinated Universal Time) Feature Flags: { "metrics": true, "metricsAbstractViews": false, "peerReview": true, "crossMark": true, "comments": true, "relatedCommentaries": true, "subject": true, "clr": false, "languageSwitch": true }

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

An Asymmetric Dual Gate Poly-Si TFTs for Improving Hot Carrier Stress Stability and Kink Effect Suppression
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

An Asymmetric Dual Gate Poly-Si TFTs for Improving Hot Carrier Stress Stability and Kink Effect Suppression
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

An Asymmetric Dual Gate Poly-Si TFTs for Improving Hot Carrier Stress Stability and Kink Effect Suppression
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *