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Amorphous Mixed TiO2 and SiO2 Films on Si(100) by Chemical Vapor Deposition

Published online by Cambridge University Press:  14 March 2011


Ryan C. Smith
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, MN 55455
Charles J. Taylor
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, MN 55455
Jeffrey Roberts
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, MN 55455
Noel Hoilien
Affiliation:
Department of Computer and Electrical Engineering, University of Minnesota, Minneapolis, MN 55455
Stephen A. Campbell
Affiliation:
Department of Computer and Electrical Engineering, University of Minnesota, Minneapolis, MN 55455
Wayne L. Gladfelter
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, MN 55455

Abstract

Amorphous thin films of composition TixSi1-xO2 have been grown by low pressure chemical vapor deposition on silicon (100) substrates using Si(O-Et)4 and either Ti(O-iPr)4 or anhydrous Ti(NO3)4 as the sources of SiO2 and TiO2, respectively. The substrate temperature was varied between 300 and 535°C, and the precursor flow rates ranged from 5 to 100 sccm. Under these conditions growth rates ranging from 0.6 to 90.0 nm/min were observed. As-deposited films were amorphous to X-rays and SEM micrographs showed smooth, featureless film surfaces. Cross-sectional TEM showed no compositional inhomogeneity. RBS revealed that x (from the formula TixSi1-xO2) was dependent upon the choice of TiO2 precursor. For films grown using TTIP-TEOS x could be varied by systematic variation of the deposition conditions. For the case of TN-TEOS x remained close to 0.5 under all conditions studied. One explanation is the existence of a specific chemical reaction between TN and TEOS prior to film deposition. TEOS was mixed with a CCl4 solution of TN at room temperature to produce an amorphous white powder (Ti/Si = 1.09) and 1HNMR of the CCl4 solution indicated resonances attributable to ethyl nitrate.


Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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