Skip to main content Accessibility help
×
Home

AlGaN Channel HEMT with Extremely High Breakdown Voltage

Published online by Cambridge University Press:  07 July 2011

Takuma Nanjo
Affiliation:
Mitsubishi Electric Corporation, Advanced Technology R & D Center, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, JAPAN
Misaichi Takeuchi
Affiliation:
Ritsumeikan Global Innovation Research Organization, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, JAPAN
Akifumi Imai
Affiliation:
Mitsubishi Electric Corporation, Advanced Technology R & D Center, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, JAPAN
Yousuke Suzuki
Affiliation:
Mitsubishi Electric Corporation, Advanced Technology R & D Center, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, JAPAN
Muneyoshi Suita
Affiliation:
Mitsubishi Electric Corporation, Advanced Technology R & D Center, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, JAPAN
Katsuomi Shiozawa
Affiliation:
Mitsubishi Electric Corporation, Advanced Technology R & D Center, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, JAPAN
Yuji Abe
Affiliation:
Mitsubishi Electric Corporation, Advanced Technology R & D Center, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, JAPAN
Eiji Yagyu
Affiliation:
Mitsubishi Electric Corporation, Advanced Technology R & D Center, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, JAPAN
Kiichi Yoshiara
Affiliation:
Mitsubishi Electric Corporation, Advanced Technology R & D Center, 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661-8661, JAPAN
Yoshinobu Aoyagi
Affiliation:
Ritsumeikan Global Innovation Research Organization, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, JAPAN
Get access

Abstract

A channel layer substitution of a wider bandgap AlGaN for a conventional GaN in high electron mobility transistors (HEMTs) is an effective method of enhancing the breakdown voltage. Wider bandgap AlGaN, however, should also increase the ohmic contact resistance. Si ion implantation doping technique was utilized to achieve sufficiently low resistive source/drain contacts. The fabricated AlGaN channel HEMTs with the field plate structure demonstrated good pinch-off operation with sufficiently high drain current density of 0.5 A/mm without noticeable current collapse. The obtained maximum breakdown voltages was 1700 V in the AlGaN channel HEMT with the gate-drain distance of 10 μm. These remarkable results indicate that AlGaN channel HEMTs could become future strong candidates for not only high-frequency devices such as low noise amplifiers but also high-power devices such as switching applications.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Keller, S., Wu, Y-F., Parish, G., Ziang, N., Xu, J. J., Keller, B. P., DenBaars, S. P. and Mishra, U. K., IEEE Trans.Electron Devices 48, 552 (2001).CrossRefGoogle Scholar
2. Kikkawa, T., Jpn. J. Appl. Phys., Part 1 44, 4896 (2005).CrossRefGoogle Scholar
3. Hikita, M., Yanagihara, M., Nakazawa, K., Ueno, H., Hirose, Y., Ueda, T., Uemoto, Y., Tanaka, T., Ueda, D. and Egawa, T., IEEE Trans.Electron Devices 52, 1963 (2005)CrossRefGoogle Scholar
4. Dora, Y., Chakraborty, A., McCarthy, L., Keller, S., DenBaars, S. P. and Mishra, U. K., IEEE Electron Device Lett. 27, 713 (2006)CrossRefGoogle Scholar
5. Tipirneni, N.. Koudymov, A., Adivarahan, V., Yang, J., Simin, G. and Khan, M. A., IEEE Electron Device Lett. 27, 716 (2006)CrossRefGoogle Scholar
6. Suh, C. S., Dora, Y., Fichtenbaum, N., McCarthy, L., Keller, S., and Mishra, U. K., Tech. Dig. - Int. Electron Devices Meet. (2006).Google Scholar
7. Choi, Y. C., Shi, J., Pophristic, M., Spencer, M. G. and Eastman, L. F., J. Vac. Sci. Technol. B 25, 1836 (2007)CrossRefGoogle Scholar
8. Uemoto, Y., Shibata, D., Yanagihara, M., Ishida, H., Matsuo, H., Nagai, S., Batta, N., Li, M., Ueda, T., Tanaka, T., and Ueda, D., Tech. Dig. - Int. Electron Devices Meet. (2007).Google Scholar
9. Morita, T., Yanagihara, M., Ishida, H., Hikita, M., Kaibara, K., Matsuo, H., Uemoto, Y., Ueda, T., Tanaka, T. and Ueda, D., Tech. Dig. - Int. Electron Devices Meet. (2007).Google Scholar
10. Ikeda, N., Niiyama, Y.. Kambayashi, H., Sato, Y., Nomura, T., Kato, S. and Yoshida, S., Proc. IEEE, 98, 1151 (2010)CrossRefGoogle Scholar
11. Suita, M., Nanjo, T., Oishi, T., Abe, Y. and Tokuda, Y., Phys. Status Solidi C 3, 2364 (2006)CrossRefGoogle Scholar
12. Oishi, T., Miura, N., Suita, M., Nanjo, T., Abe, Y., and Ozeki, T., Ishikawa, H., Egawa, T.andJimbo, T., J. Appl. Phys. 94, 1662 (2003).CrossRefGoogle Scholar
13. Kamo, Y., Kunii, T. Takeuchi, H., Yamamoto, Y., Totsuka, M., Shiga, T., Minami, H., Kitano, T., Miyakuni, S., Oku, T., Inoue, A., Nanjo, T., Tsuyama, Y., Shirahana, R., Iyomasa, K., Yamanaka, K., Ishikawa, T., Takagi, T., Marumoto, K. and Matsuda, Y., 2005 IEEE MTT-S Int. Microwave Symp.Dig. 495 (2005).Google Scholar
14. Higashiwaki, M., Hirose, N. and Matsui, T.: IEEE Electron Device Lett. 26, 139 (2005).CrossRefGoogle Scholar
15. Higashiwaki, M., Matsui, T. and Mimura, T.: IEEE Electron Device Lett. 27, 16 (2006).CrossRefGoogle Scholar
16. Raman, A., Dasgupta, S., Rajan, S., Speck, J. S. and Mishra, U. K., Jpn. J. Appl. Phys., 47, 3357 (2008)CrossRefGoogle Scholar
17. Nanjo, T., Takeuchi, M., Imai, A., Suita, M., Oishi, T., Abe, Y., Yagyu, E., Kurata, T., Tokuda, Y. and Aoyagi, Y., Electron. Lett. 39, 750 (2003).Google Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 10 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 16th January 2021. This data will be updated every 24 hours.

Hostname: page-component-77fc7d77f9-kstv4 Total loading time: 0.263 Render date: 2021-01-16T05:29:20.949Z Query parameters: { "hasAccess": "0", "openAccess": "0", "isLogged": "0", "lang": "en" } Feature Flags last update: Sat Jan 16 2021 05:01:20 GMT+0000 (Coordinated Universal Time) Feature Flags: { "metrics": true, "metricsAbstractViews": false, "peerReview": true, "crossMark": true, "comments": true, "relatedCommentaries": true, "subject": true, "clr": true, "languageSwitch": true, "figures": false, "newCiteModal": false, "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true }

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

AlGaN Channel HEMT with Extremely High Breakdown Voltage
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

AlGaN Channel HEMT with Extremely High Breakdown Voltage
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

AlGaN Channel HEMT with Extremely High Breakdown Voltage
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *