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Advanced Properties of Silicon Oxynitride (SiOxNy) Thin Films Prepared by Pulsed Laser Deposition

Published online by Cambridge University Press:  21 February 2011

R.-F. Xiao
Affiliation:
Department of Physics, the Hong Kong University of Science and Technology Clear Water Bay, Kowloon, Hong Kong
L.C. Ng
Affiliation:
Department of Physics, the Hong Kong University of Science and Technology Clear Water Bay, Kowloon, Hong Kong
H.B. Liao
Affiliation:
Department of Physics, the Hong Kong University of Science and Technology Clear Water Bay, Kowloon, Hong Kong
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Abstract

A pulsed laser deposition technique has been used to grow silicon oxynitride (SiOxNy) thin films at low deposition temperatures (25°C - 300°C). the thin films were found to be quite smooth in surface morphology, extremely inert in chemical solution and highly transparent in the optical range of 0.3 μm to 5 μm. the refractive index was tunable between 1.4 - 2.1 by the addition of oxygen in substitution of nitrogen in the film, and the dielectric constant is much larger than the similar films grown by conventional chemical vapor deposition. the high quality of the SiOxNy films deposited at such low temperatures was resulted from the large kinetic energy carried by the impinging particles created by the ablation of a high-power pulsed excimer laser. the kinetic energy of the impinged particles on the substrate provides thermal energy for surface diffusion and relaxation.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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