Hostname: page-component-77c89778f8-vsgnj Total loading time: 0 Render date: 2024-07-16T11:26:18.768Z Has data issue: false hasContentIssue false

500 K operation AlGaN/GaN HFETs with a large current and a high breakdown voltage

Published online by Cambridge University Press:  01 February 2011

Hiroshi Kambayashi
Affiliation:, The Furukawa Electric Co., Ltd., Yokohama R&D Laboratories, 2-4-3 Okano, Nishi-ku, Yokohama, Kanagawa, 220-0073, Japan
Jiang Li
Nariaki Ikeda
Affiliation:, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama, Kanagawa, 220-0073, Japan
Seikoh Yoshida
Affiliation:, The Furukawa Electric Co., Ltd., 2-4-3 Okano, Nishi-ku, Yokohama, Kanagawa, 220-0073, Japan
Get access


It is reported that we demonstrated a large current operation AlGaN/GaN HFET with a low-on state resistance and a high breakdown voltage operation at room temperature and 500 K. We developed our unique ohmic electrode using Ti/AlSi/Mo. In addition, we investigated the dependence between the distance from the gate electrode to the drain electrode and the off-state breakdown voltage. As a result, the breakdown voltage of a unit HFET was over 1100 V. Furthermore, on the large scale HFET with the gate width of 240 mm, the maximum drain current of over 50 A was obtained at room temperature and also, that of over 25 A was obtained at 500 K. The off-state breakdown voltage was obtained about 800 V at room temperature and about 600 V at 500 K, although Si-based FETs can not operate in such a high temperature.

Research Article
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)



[1] Chow, T.P., Tyagi, R.: IEEE Trans. Electron Devices, 41, (1994) 1481.Google Scholar
[2] Akutas, O., Fan, Z.F., Mohammad, S.N., Botchkarev, A.E., and Morkoc, H.: Applied Physics Letters, 69, (1996) 3872.Google Scholar
[3] Yang, W., Lu, J., Asifkhan, M., Adesida, I.: IEEE Trans. Electron Devices, 48, (2001) 581.Google Scholar
[4] Yoshida, S. and Suzuki, J.: Jpn J Appl. Phys. Lett., 38, (1999) 851.Google Scholar
[5] Yoshida, S., Li, J., Wada, T., and Takehara, H.: Proc. 15th ISPSD, (2003) 58.Google Scholar
[6] Yoshida, S. and Ishii, H.: Phys. Stat. Sol. (a), Vol.188, (2001) 243.Google Scholar
[7] Kumar, V., Zhor, L., Selvanathan, D., and Adesida, I.: Applied Physics, 92, (2002) 1712.Google Scholar
[8] Nakayama, T., Miyamoto, H., Ando, Y., Okamoto, Y., Inoue, T., Hataya, K., and Kuzuhara, M.: Applied Physics Letters, 85, (2004) 3775.Google Scholar