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5MeV Si Ion Modification on Thermoelectric SiO2/SiO2+Cu Multilayer Films

  • C. Smith (a1), S. Budak (a1), T. Jordan (a2), J. Chacha (a2), B. Chhay (a3), K. Heidary (a2), R. B. Johnson (a3), C. Muntele (a1) and D. ILA (a4)...

Abstract

We prepared samples by electron beam physical vapor deposition EB-PVD followed by ion bombardment. The samples were than characterized by photoluminescence (PL), x-ray photoelectron spectroscopy (XPS). PL was used to characterize the available energy states. XPS was used to determine the binding energies. The ML’s are comprised of 100 alternating layers of SiO2/SiO2+Cu.

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Corresponding author

*Corresponding author: C. Smith; Tel.: 256-372-5866; Fax: 256-372-5855; Email: cydale.smith@cim.aamu.edu

References

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Keywords

5MeV Si Ion Modification on Thermoelectric SiO2/SiO2+Cu Multilayer Films

  • C. Smith (a1), S. Budak (a1), T. Jordan (a2), J. Chacha (a2), B. Chhay (a3), K. Heidary (a2), R. B. Johnson (a3), C. Muntele (a1) and D. ILA (a4)...

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