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4H-SiC Power Devices: Comparative Overview of UMOS, DMOS, and GTO Device Structures

  • J. B. Casady (a1), A. K. Agarwal (a1), L. B. Rowland (a1), S. Seshadri (a1), R. R. Siergiej (a1), S. S. Mani (a1), D. C. Sheridan (a1), P. A. Sanger (a1) and C. D. Brandt (a1)...

Abstract

Silicon Carbide (SiC) is an emerging semiconductor material which has been widely predicted to be superior to both Si and GaAs in the area of power electronic switching devices [1]. This paper presents an overview of SiC power devices and concludes that MOS Turn-Off Thyristor (MTOTM) is one of the most promising near term SiC switching device given its high power potential, ease of turn-off, 500°C operation and resulting reduction in cooling requirements. It is further concluded that in order to take advantage of SiC power devices, high temperature packages and components with double sided attachment need to be developed along with the SiC power devices.

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