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40 Years Trajectory of Amorphous Semiconductor Research

Published online by Cambridge University Press:  17 March 2011

Yoshihiro Hamakawa
Yoshihiro Hamakawa*
Affiliation:
Faculty of Science and Engineering, Ritsumeikan University 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan
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Abstract

A review is given on a research trajectory of amorphous and microcrystalline semiconductors and their device applications proceeded since 1970. A brief explanation on the motivation to start amorphous semiconductor research is given to produce a new kind of synthetic semiconductor having continuous energy gap controllability with valency electron controllability through our experience of modulation spectroscopy in semiconductors.

The first material we have challenged is Si-As-Te chalcogenide semiconductor which has a very wide vitreous region in Gibb's Triangle. A series of systematic experiments has been carried out in the terrestrial environment since 1971, and also within the TT-500A rocket experiment in 1980, and the Spacelab. J experiments FMPT (First Material Processing Test) project in 1992. The second material is hydrogenated amorphous silicon (a-Si:H) and its alloys started in 1976 just after the Garmisch Partenkirchen ICALS-6. With some basic research on the a-Si:H film deposition technology and film quality improvement, our continuous effort to improve the efficiency bore the tandem type solar cells in 1979, and also new products of a-SiC:H and a-SiGe:H in the early period of 1980s are described. These innovative device structures and materials have bloomed in the middle of 1980s in R & D phase such as a-SiC/a-Si heterojunction solar cells, a-Si/a-SiGe and also a-Si/poly-Si tandem type solar cells, and industrialized in recent few years. New kind of trials on full-color thin film light emitting devices has also been recently initiated with wide range of band gap controllability of a-SiC:H.

The third material is microcrystalline silicon (µc-Si) and their alloys which gathers a tremendous R & D effort as a promised candidate for the bottom cell of the a-Si/µc-Si tandem solar cells aimed for the all-round plasma CVD process for the next age thin film photovoltaic devices. In the final part of presentation, a brief discussion will be given on a technological evolution from “bulk crystalline age” to “multilayered thin film age” in the semiconductor optoelectronics toward 21 century.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A17.2
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Nunoshita, M., Arai, H., Hamakawa, Y., and Fujimoto, T., Proc. 10th Intern. Congress on Glass, Kyoto Japan (1974) p.7.Google Scholar
2. Hamakawa, Y., Ceramics 22, 277 (1987) (in Japanese).Google Scholar
3. Okamoto, H., in Amorphous Silicon, ed. Tanaka, K. (Ohm-sha, Tokyo, 1992) pp.101–188.Google Scholar
4. Hamakawa, Y., W.S.Kolahi, Hattori, K., Sada, C. and Okamoto, H., J. Jpn. Soc. Microgravity Appl. 12, 27 (1995).Google Scholar
5. Emeleus, H.J. and Stewart, K., Trans. Faraday Society 32, 1577 (1936).Google Scholar
6. Spear, W.E. and LeComber, P.G., Philos. Mag. 33, 935 (1976).Google Scholar
7. Okamoto, H., Nitta, Y., Adachi, T., and Hamakawa, Y., Surf. Sci. 86, 486 (1979).Google Scholar
8. Tawada, Y., Okamoto, H., and Hamakawa, Y., Appl. Phys. Lett. 39, 237 (1981).Google Scholar
9. Hamakawa, Y. and Hamakawa, Y., Intern. J. Sol. Energy 1, 1421 (1982).Google Scholar
10. Hamakawa, Y., Matsumoto, Y., Hirata, G., and Okamoto, H., Mat. Res. Soc. Symp. Proc. 164, 291 (1990).Google Scholar
11. Carlson, D.E and Wronski, C.R., Appl. Phys. Lett. 28, 671 (1977).Google Scholar
12. Okamoto, H.. Nitta, Y., Yamaguchi, T., and Hamakawa, Y., Sol. Energy Mater. 3, 313 (1980).Google Scholar
13. Hamakawa, Y., Okamoto, H., and Nitta, Y., Appl. Phys. Lett. 35, 15 (1979).Google Scholar
14.Japanese Patent Sho-54-32993 and U.S. Patent 4,271,328, March 20, 1979.Google Scholar
15. Takakura, H., Jpn. J. Appl. Phys. 31, 2394 (1992).Google Scholar
16. Ma, W., Horiuchi, T., Yoshimi, M., Hattori, K., Okamoto, H., and Hamakawa, Y., Proc. PVSEC-6 (New Delhi, 1992) 463.Google Scholar
17. Ma, W., Horiuchi, T., Lim, C.C., Yoshimi, M., Okamoto, H., and Hamakawa, Y., Proc. 23rd IEEE PVSC, 1993, p. 338.Google Scholar
18. Ichikawa, Y., Yoshida, T., Sakai, H., Proc. 1st WCPEC, Hawaii, 1994. p. 441.Google Scholar
19. Nakata, Y., Sannomiya, H., Moriguchi, S., Inoue, Y., Nomoto, K., Yokota, A., Itoh, M., and Tsuji, T., Optoelectronics - Devices and Technol. - 5, 209 (1990).Google Scholar
20. Yamamoto, K., Tech. Dig. PVSEC-11 (Sapporo, 1999) 225.Google Scholar
21. Pankove, J.D. and Carlson, D.E., Appl. Phys. Lett. 29, 620 (1976).Google Scholar
22. Kruangam, D., Endo, T., Okamoto, H., and Hamakawa, Y., Jpn. J. Appl. Phys. 24, L806 (1985).Google Scholar
23. Hamakawa, Y., Appl. Surf. Sci. 92, 1 (1996).Google Scholar
24. Loebner, E.E., RCA Rev. 20, 715 (1959).Google Scholar
25. Toyama, T., Yoshimi, M., Ishiko, T., Tachi, T., Hiratsuka, K., Okamoto, H., and Hamakawa, Y., Optoelectronics - Devices and Technol. - 9, 401 (1994).Google Scholar