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3D Atomistic Simulations of Submicron Device Fabrication

Published online by Cambridge University Press:  10 February 2011

Marius M. Buneat  and
Scott T. Dunham
Marius M. Buneat
Affiliation:
Department of Physics, Boston University, Boston, MA 02215. http://enge.bu.edu/~mbunea
Scott T. Dunham
Affiliation:
Department of Electrical and Computer Engineering, Boston University, Boston, MA 02215.
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Abstract

We use the Lattice Monte Carlo method to simulate the coupled motion of vacancies, interstitials and dopants during the annealing of a 50nm channel length NMOS structure. The initial defect locations are taken from Monte Carlo ion implantation simulations. The resulting defects diffuse, recombine, pair and cluster, with rates of these atomic processes calculated based on the local environment. Dopant redistribution occurs via both displacement by vacancies as well as the formation and diffusion of mobile boron and arsenic interstitials. We use these simulations to demonstrate the potential of atomistic simulations for deep submicron devices and to explore the influence of atomistic processes on macroscopic behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 490: Symposium Q – Semiconductor Process & Device Performance Modeling , 1997 , 3
Copyright
Copyright © Materials Research Society 1998

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References

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