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2D Image Sensing Arrays with NIP Diodes

  • C Van Berkel (a1), N C Bird (a1), C J Curling (a1) and I D French (a1)

Abstract

2D image sensor arrays made with a-Si devices on glass over large area are of considerable interest as document scanners and in medical applications. We have made a test array containing a-Si NIP diodes for both the sensors and the active matrix switching devices. The issues of vertical crosstalk and image lag are discussed in relation to the device performance of the switching diode. The vertical crosstalk is controlled by the diode capacitance and the image lag by the high transient current in the device. We speculate that the transient current is a trap filling current in the deep states of the switching diode.

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