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1/f Noise Measurements of Hydrogenated Amorphous Silicon-Carbon Alloys

Published online by Cambridge University Press:  16 February 2011

H. M. Dyalsingh ,
G. M. Khera ,
J. Kakalios ,
C. C. Tsai  and
R. A. Street
H. M. Dyalsingh
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455 USA
G. M. Khera
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455 USA
J. Kakalios
Affiliation:
The University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455 USA
C. C. Tsai
Affiliation:
Xerox-PARC, Palo Alto, CA 94304 USA
R. A. Street
Affiliation:
Xerox-PARC, Palo Alto, CA 94304 USA
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Abstract

Measurements of the optical, electronic and 1/f noise properties for a series of n-type doped hydrogenated amorphous silicon carbide thin films with varying gas phase concentrations of CH4 are described. The increase in the optical absorption edge of the n-type a-SiCx:H films with the addition of carbon is slower than in p-type films. Studies of the variation in the non-Gaussian statistics which characterize the 1/f noise indicate that the disorder at the mobility edge is greater for films with higher carbon concentrations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 631
Copyright
Copyright © Materials Research Society 1994

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References

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