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1/f Noise and Thermal Equilibration Effects in Hot Wire Deposited Amorphous Silicon

Published online by Cambridge University Press:  10 February 2011

G. M. Khera ,
J. Kakalios ,
Q. Wang  and
E. Iwaniczko
G. M. Khera
Affiliation:
University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455 USA
J. Kakalios
Affiliation:
University of Minnesota, School of Physics and Astronomy, Minneapolis, MN 55455 USA
Q. Wang
Affiliation:
NREL, Golden, CO 80309 USA
E. Iwaniczko
Affiliation:
NREL, Golden, CO 80309 USA
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Abstract

Measurements of the conductance fluctuations and thermal equilibration of the dark conductivity of a series of undoped hydrogenated amorphous silicon thin films synthesized by Hot-Wire Chemical Vapor Deposition (HWCVD), with hydrogen contents varying from less than one to twelve atomic percent are reported. The spectral density of the conductance fluctuations varies inversely with frequency f and is dependent upon hydrogen concentration; the 1/f noise statistics are non- Gaussian, indicating correlated fluctuators as is observed in PECVD a-Si:H. These results indicate that aspects of electronic transport and defect dynamics in HWCVD films are similar to those in PECVD a-Si:H films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 641
Copyright
Copyright © Materials Research Society 1996

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