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1.55 Micron Emission from InAs/InP Self-Assembled Quantum Dots

  • Ray Murray (a1), Caroline Bryan (a1), Chris Button (a2), D. Spikes (a1) and G. Hill (a2)...

Abstract

Self-assembled InAs/InP and InAs/InGaAsP quantum dots (QDs) grown by metal-organic chemical vapour epitaxy (MOVPE) exhibit emission at 1.5–1.6 μm at room temperature. P-I-N diodes incorporating a single InAs/InGaAsP QD layer exhibit strong electroluminescence over a wide range of input currents and emit significantly more light per layer than a InGaAs/InGaAsP multi-quantum well device.

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