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1.5 μm Range Self-Organized In0.65Ga0.35As/In0.52Al0.48As Quantum Wire Structures Grown on (775)B-Oriented InP Substrates by Molecular Beam Epitaxy

Published online by Cambridge University Press:  11 February 2011

K. Hyodo ,
Y. Ohno ,
H. Kanamori ,
T. Kitada ,
S. Shimomura  and
S. Hiyamizu
K. Hyodo
Affiliation:
Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka, 560–8531, Japan
Y. Ohno
Affiliation:
Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka, 560–8531, Japan
H. Kanamori
Affiliation:
Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka, 560–8531, Japan
T. Kitada
Affiliation:
Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka, 560–8531, Japan
S. Shimomura
Affiliation:
Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka, 560–8531, Japan
S. Hiyamizu
Affiliation:
Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka, 560–8531, Japan
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Abstract

High quality quantum wire (QWR) structures with an emitting wavelength in the 1.5-μm range were self-organized in an In0.65Ga0.35As/In0.52Al0.48As quantum well layer grown on a (775)B-oriented InP substrate by molecular beam epitaxy. Photoluminescence (PL) from the (775)B In0.65Ga0.35As/In0.52Al0.48As QWRs with a nominal well width of 4.8 nm was observed at 1.43 μm at 12 K, which corresponds to a PL wavelength of about 1.5 μm at room temperature. The PL peak was considerably polarized along the wire direction with a polarization degree of P [= (I∥ - I⊥) / (I∥ + I] ⊥)] = 0.14, indicating its good one-dimensionality. The FWHM of the PL peak was as small as 17 meV, which is the best value for InGaAs QWRs on InP substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M6.7
Copyright
Copyright © Materials Research Society 2003

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References

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