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100-nm Channel Length a-Si:H Vertical Thin Film Transistors

Published online by Cambridge University Press:  17 March 2011

Isaac Chan  and
Arokia Nathan
Isaac Chan
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
Arokia Nathan
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
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Abstract

This paper reports on hydrogenated amorphous silicon (a-Si:H) vertical thin film transistors (VTFTs) with channel length of 100 nm, using conventional planar TFT processing technology. The device has a fully self-aligned vertical channel structure, which is highly insensitive to the non-uniformity of reactive ion etching (RIE). Therefore, the VTFT process is very suitable for large-area electronics. Presently, we can demonstrate VTFTs with remarkable ON/OFF current ratio of more than 108, low leakage current down to 1 fA, and good subthreshold slope of 0.8 V/dec at Vd = 1.5 V. The impacts of contemporary device issues, such as short-channel effects and contact resistance, on the performance of short-channel VTFTs and suggested avenues for improvement are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 814: Symposium I – Flexible Electronics 2004-Materials and Device Technology , 2004 , I2.4/A3.4
Copyright
Copyright © Materials Research Society 2004

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