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100-nm Channel Length a-Si:H Vertical Thin Film Transistors

Published online by Cambridge University Press:  17 March 2011

Isaac Chan  and
Arokia Nathan
Isaac Chan
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
Arokia Nathan
Affiliation:
Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
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Abstract

This paper reports on hydrogenated amorphous silicon (a-Si:H) vertical thin film transistors (VTFTs) with channel length of 100 nm, using conventional planar TFT processing technology. The device has a fully self-aligned vertical channel structure, which is highly insensitive to the non-uniformity of reactive ion etching (RIE). Therefore, the VTFT process is very suitable for large-area electronics. Presently, we can demonstrate VTFTs with remarkable ON/OFF current ratio of more than 108, low leakage current down to 1 fA, and good subthreshold slope of 0.8 V/dec at Vd = 1.5 V. The impacts of contemporary device issues, such as short-channel effects and contact resistance, on the performance of short-channel VTFTs and suggested avenues for improvement are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 814: Symposium I – Flexible Electronics 2004-Materials and Device Technology , 2004 , I2.4/A3.4
Copyright
Copyright © Materials Research Society 2004

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References

1. Uchida, Y., Nara, Y., and Matsumura, M., IEEE Electron Device Lett. EDL–5 (4), 105 (1984).Google Scholar
2. (2003) International Technology Roadmap for Semiconductors (http://public.itrs.net/).Google Scholar
3. Chan, I. and Nathan, A., Mat. Res. Soc. Symp. Proc. 715, 757 (2002).Google Scholar
4. Lee, M.Z., Lee, C.L., and Lei, T.F., Jpn. J. Appl. Phys. 42 (Pt. 1, 4B), 2123 (2003).Google Scholar
5. Lee, C.H., Striakhilev, D., and Nathan, A., J. Vac. Sci. Technol. A 22 (2004), to appear.Google Scholar
6. Hirose, N., Uchida, Y., and Matsumura, M., Jpn. J. Appl. Phys. 24 (2), 200 (1985).Google Scholar
7. Roy, K., Mukhopadhyay, S., Mahmoodi-Meimand, H., Proc. IEEE 91 (2), 305 (2003).Google Scholar
8. Luan, S. and Neudeck, G.W., J. Appl. Phys. 72 (2), 766 (1992).Google Scholar