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Raman investigation of the air stability of 2H polytype HfSe2 thin films

  • Antonio Cruz (a1), Zafer Mutlu (a2), Mihrimah Ozkan (a3) and Cengiz S. Ozkan (a1) (a4)

Abstract

Hafnium diselenide (HfSe2) has a high theoretical carrier mobility but is among the most reactive transition-metal dichalcogenides (TMDs). Herein, we have investigated the air stability of 2H polytype HfSe2 single-crystal thin films by spectroscopic and microscopic techniques. Raman spectroscopy measurements in conjunction with atomic force microscopy reveal the formation of selenium-rich blisters on the surface of the crystals upon air exposure. Transmission electron microscopy analysis indicates that 2H-HfSe2 undergoes a spontaneous phase change to 1T-HfSe2. These results offer Raman spectroscopy as a fast, convenient, non-destructive technique to reliably monitor the surface degradation of TMDs and present an opportunity for further study of phase changes in this material.

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Corresponding author

Address all correspondence to Cengiz S. Ozkan at cozkan@engr.ucr.edu

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Work performed during postdoctoral studies at the University of California, Riverside.

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Raman investigation of the air stability of 2H polytype HfSe2 thin films

  • Antonio Cruz (a1), Zafer Mutlu (a2), Mihrimah Ozkan (a3) and Cengiz S. Ozkan (a1) (a4)

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