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Domain structures and magnetoelectric effects in multiferroic nanostructures

Published online by Cambridge University Press:  13 September 2016

Deyang Chen
Affiliation:
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Normal University, Guangzhou 510006, China
Xingsen Gao*
Affiliation:
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Normal University, Guangzhou 510006, China
Jun-Ming Liu*
Affiliation:
Laboratory of Solid State Microstructures, Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
*
Address all correspondence to Xingsen Gao, Jun-Ming Liu at xingsengao@scnu.edu.cn; liujm@nju.edu.cn
Address all correspondence to Xingsen Gao, Jun-Ming Liu at xingsengao@scnu.edu.cn; liujm@nju.edu.cn
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Abstract

Multiferroic nanostructures have been attracting tremendous attention not only for novel phenomena associated with fundamental physics, but also due to exciting application potentials in future nanoelectronic devices. In this mini-review, we first introduce several fabrication techniques recently developed for single phase and composite multiferroic nanostructures. Then, the topologic vortex domain structures in various ferroic nanostructures, which may bring about additional fundamental discoveries and applications in ultrahigh density recording, are discussed. Particular attention is paid to magnetoelectric effects in multiferroic nanodots, including room temperature electric field induced magnetic domain switching. Finally, existing challenges and new directions, e.g., cross-couplings among multiple functionalities, are prospected. We genuinely hope that this mini-review will arouse the readers' interest in this fascinating field.

Type
Functional Oxides Prospective Articles
Copyright
Copyright © Materials Research Society 2016 

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