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Determination of the barrier height of iridium with hydrogen-terminated single crystal diamond

  • Yan-Feng Wang (a1), Wei Wang (a1), Xiaohui Chang (a1), Juan Wang (a1), Jiao Fu (a1), Tianfei Zhu (a1), Zongchen Liu (a1), Yan Liang (a1), Dan Zhao (a1), Zhangcheng Liu (a1), Minghui Zhang (a1), Kaiyue Wang (a1) (a2), Hong-Xing Wang (a1) and Ruozheng Wang (a1)...


Direct determination of barrier height (ΦBH) value between Ir and single crystal (001) hydrogen-terminated diamond with lightly boron doped has been performed using x-ray photoelectron spectroscopy technique. 70 nm Ir islands were formed on hydrogen-terminated diamond surface using anodic aluminum oxide. The ΦBH value for Ir/hydrogen-terminated diamond was −0.43 ± 0.14 eV, indicating that Ir was a suitable metal for ohmic contact with hydrogen-terminated diamond. The band diagram of Ir/hydrogen-terminated diamond was obtained. The experimental ΦBH was compared with the theoretical ΦBH in this work.


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Address all correspondence to Hong-Xing Wang at


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1.Imanishi, S., Horikawa, K., Oi, N., Okubo, S., Kageura, T., Hiraiwa, A., and Kawarada, H.: 3.8 W/mm power density for ALD Al2O3-based two-dimensional hole gas diamond MOSFET operating at saturation velocity. IEEE Electron Device Lett. 1, 99102 (2018).
2.Liu, J., Ohsato, H., Liao, M., Imura, M., Watanabe, E., and Koide, Y.: Logic circuits with hydrogenated diamond field-effect transistors. IEEE Electron Device Lett. 38, 992–925 (2017).
3.Wang, Y-F., Chang, X., Zhang, X., Fu, J., Fan, S., Bua, R., Zhang, J., Wang, W., Wang, H-X., and Wang, J.: Normally-off hydrogen-terminated diamond field-effect transistor with Al2O3 dielectric layer formed by thermal oxidation of Al. Diam. Relat. Mater. 81, 113117 (2018).
4.Wang, Y-F., Chang, X., Li, S., Zhao, D., Shao, G., Zhu, T., Fu, J., Zhang, P., Chen, X., Li, F., Liu, Z., Fan, S., Bu, R., Wen, F., Zhang, J., Wang, W., and Wang, H-X.: Ohmic contact between iridium film and hydrogen-terminated single crystal diamond. Sci. Rep. 7, 12157 (2017).
5.Verona, C., Arciprete, F., Foffi, M., Limiti, E., Marinelli, M., Placidi, E., Prestopino, G., and Verona Rinati, G.: Influence of surface crystal-orientation on transfer doping of V2O5/H-terminated diamond. Appl. Phys. Lett. 112, 181602 (2018).
6.Kitabayashi, Y., Kudo, T., Tsuboi, H., Yamada, T., Xu, D., Shibata, M., Matsumura, D., Hayashi, Y., Syamsul, M., Inaba, M., Hiraiwa, A., and Kawarada, H.: Normally-Off C–H Diamond MOSFETs With Partial C–O Channel Achieving 2-kV Breakdown Voltage. IEEE Electron Device Lett. 38, 363366 (2017).
7.Wang, W., Fu, K., Hu, C., Li, F.N., Liu, Z.C., Li, S.Y., Lin, F., Fu, J., Wang, J.J., and Wang, H.X.: Diamond based field-effect transistors with SiNx and ZrO2 double dielectric layers. Diam. Relat. Mater. 69, 237240 (2016).
8.Syamsul, M., Oi, N., Okubo, S., Kageura, T., and Kawarada, H.: Heteroepitaxial diamond field-effect transistor for high voltage applications. IEEE Electron Device Lett. 39, 5154 (2018).
9.Huang, B., Bai, X., Lam, S.K., and Tsang, K.K.: Diamond FinFET without hydrogen termination. Sci. Rep. 8, 3063 (2018).
10.Crawford, K.G., Qi, D., McGlynn, J., Ivanov, T.G., Shah, P.B., Weil, J., Tallaire, A., Ganin, A.Y., and Moran, D.A.J.: Thermally stable, high performance transfer doping of diamond using transition metal oxides. Sci. Rep. 8, 3342 (2018).
11.Imura, M., Hayakawa, R., Ohsato, H., Watanabe, E., Tsuya, D., Nagata, T., Liao, M., Koide, Y., Yamamoto, J-I., Ban, K., Iwaya, M., and Amano, H.: Development of AlN/diamond heterojunction field effect transistors. Diam. Relat. Mater. 124, 206209 (2012).
12.Werner, M., Job, R., Denisenko, A., Zaitsev, A., Fahrner, W.R., Johnston, C., Chalker, P.R., and Buckley-Golder, I.M.: How to fabricate low-resistance metal-diamond contacts. Diam. Relat. Mater. 5, 723727 (1996).
13.Wang, W., Hu, C., Li, F.N., Li, S.Y., Liu, Z.C., Wang, F., Fu, J., and Wang, H.X.: Palladium Ohmic contact on hydrogen-terminated single crystal diamond film. Diam. Relat. Mater. 63, 175179 (2016).
14.Li, F.N., Liu, J.W., Zhang, J.W., Wang, X.L., Wang, W., Liu, Z.C., and Wang, H.X.: Measurement of barrier height of Pd on diamond (100) surface by X-ray photoelectron spectroscopy. Appl. Surf. Sci. 370, 496500 (2016).
15.Kono, S., Teraji, T., Kodama, H., Ichikawa, K., Ohnishi, S., and Sawabe, A.: Direct determination of the barrier height of Ti-based ohmic contact on p-type diamond (001). Diam. Relat. Mater. 60, 117122 (2015).
16.Yokoba, M., Koide, Yasuo, Otsuki, A., Ako, F., Oku, T., and Murakami, M.: Carrier transport mechanism of Ohmic contact to p-type diamond. J. Appl. Phys. 81, 6815 (1997).
17.Koide, Y., Yokoba, M., Otsuki, A., Ako, F., Oku, T., and Murakami, M.: Carrier transport mechanisms through the metal p-type diamond semiconductor interface. Diam. Relat. Mater. 6, 847851 (1997).
18.Kono, S., Kodama, H., Ichikawa, K., Yoshikawa, T., Abukawa, T., and Sawabe, A.: Electron spectro-microscopic determination of barrier height and spatial distribution of Au and Ag Schottky junctions on boron-doped diamond (001). Jpn. J. Appl. Phys. 53, 05FP03 (2014).
19.Kono, S., Teraji, T., Takeuchi, D., Ogura, M., Kodama, H., and Sawabe, A.: Direct determination of the barrier height of Au ohmic-contact on a hydrogen-terminated diamond (001) surface. Diam. Relat. Mater. 73, 182189 (2017).
20.Freakley, S.J., Ruiz-Esquius, J., and Morgan, D.J.: The X-ray photoelectron spectra of Ir, IrO2 and IrCl3 revisited. Surf. Interface Anal. 49, 8 (2017).
21.Kraut, E.A., Grant, R.W., Waldrop, J.R., and Kowalczyk, S.P.: Precise determination of the valence-band edge in X-ray photoemission spectra application to measurement of semiconductor interface potentials. Phys. Rev. Lett. 44, 16201623 (1980).
22.Tung, R.T.: Recent advances in Schottky barrier concepts. Mater. Sci. Eng., R 35, 1138 (2001).
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MRS Communications
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