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Boron doping of ultrananocrystalline diamond films by thermal diffusion process

  • Pablo Tirado (a1) (a2), Jesus J. Alcantar-Peña (a2), Elida de Obaldia (a2) (a3), Yuriy Kudriavtsev (a4), Rafael García (a1) and Orlando Auciello (a2) (a5)...

Abstract

A novel process for Boron doping of ultrananocrystalline diamond (UNCD) films, using thermal diffusion, is described. Hall measurements show an increase in carrier concentration from 1013 to 1020 cm−3. Ultraviolet Photoelectron Spectroscopy and x-ray Photoelectron Spectroscopy show a band gap of 4.4 eV, a work function of 5.1 eV and a Fermi level at 2.0 eV above the valence band. Boron atoms distribution through UNCD films, was measured by Secondary Ion Mass Spectrometry, revealing Boron atoms diffusivity of about 10−14 cm2/s. Raman spectroscopy and x-ray Diffraction analysis revealed that UNCD films did not suffer graphitization nor structural damage during annealing.

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Corresponding author

Address all correspondence to Orlando Auciello at orlando.auciello@utdallas.edu

References

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Boron doping of ultrananocrystalline diamond films by thermal diffusion process

  • Pablo Tirado (a1) (a2), Jesus J. Alcantar-Peña (a2), Elida de Obaldia (a2) (a3), Yuriy Kudriavtsev (a4), Rafael García (a1) and Orlando Auciello (a2) (a5)...

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