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Atom probe tomography of phosphorus- and boron-doped silicon nanocrystals with various compositions of silicon rich oxide

Published online by Cambridge University Press:  14 September 2016

Keita Nomoto*
Affiliation:
School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, NSW 2052, Australia
Sebastian Gutsch
Affiliation:
IMTEK, Albert-Ludwigs-University Freiburg, 79110 Freiburg, Germany
Anna V. Ceguerra
Affiliation:
Australian Centre for Microscopy & Microanalysis, and School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, NSW 2006, Australia
Andrew Breen
Affiliation:
Australian Centre for Microscopy & Microanalysis, and School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, NSW 2006, Australia
Hiroshi Sugimoto
Affiliation:
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan
Minoru Fujii
Affiliation:
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan
Ivan Perez-Wurfl
Affiliation:
School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, NSW 2052, Australia
Simon P. Ringer
Affiliation:
Australian Institute for Nanoscale Science and Technology, and School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, NSW 2006, Australia
Gavin Conibeer*
Affiliation:
School of Photovoltaic and Renewable Energy Engineering, The University of New South Wales, NSW 2052, Australia
*
Address all correspondence to Keita Nomoto, Gavin Conibeer at z3485134@unsw.edu.au; g.conibeer@unsw.edu.au
Address all correspondence to Keita Nomoto, Gavin Conibeer at z3485134@unsw.edu.au; g.conibeer@unsw.edu.au
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Abstract

We analyze phosphorus (P)- and boron (B)-doped silicon nanocrystals (Si NCs) with various compositions of silicon-rich oxide using atom probe tomography. By creating Si iso-concentration surfaces, it is confirmed that there are two types of Si NC networks depending on the amount of excess Si. A proximity histogram shows that P prefers to locate inside the Si NCs, whereas B is more likely to reside outside the Si NCs. We discuss the difference in a preferential location between P and B by a segregation coefficient.

Type
Research Letters
Copyright
Copyright © Materials Research Society 2016 

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References

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