Skip to main content Accessibility help
×
Home

GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets

  • Ferdinand Scholz, Thomas Wunderer, Barbara Neubert, Martin Feneberg and Klaus Thonke...

Abstract

In this article, we briefly review a particular approach to fabricate light-emitting diode (LED) structures on the semipolar side facets of triangular GaN stripes grown by selective area epitaxy. This approach enables a significant reduction of the internal piezoelectric fields in the LED's active area, while still maintaining the well-established c-direction as the main epitaxial growth direction for GaN-based devices on large area substrates. For the latter, these internal fields are responsible for the lower efficiency of GaN-based LEDs in the longer (green) wavelength range. The reduced internal fields of such semipolar LEDs can be directly determined by photoluminescence (PL) investigations on pre-biased LED structures and further confirmed by time-resolved PL studies. The epitaxial growth behavior is strongly facet-dependent, leading to different surface flatnesses on different semipolar facets formed by this procedure and different – indium incorporation efficiencies. An increased indium uptake on semipolar {1101} facets as compared to conventional c-plane layers can help to shift the LED emission to longer wavelengths near 500 nm, despite the significantly reduced field-dependent Stark shift, which helps to reach the green wavelength range in polar LEDs.

Copyright

References

Hide All
1Takeuchi, T., Amano, H., Akasaki, I., Jpn. J. Appl. Phys. 39, 413 (2000).
2Takeuchi, T., Lester, S., Basile, D., Girolami, G., Twist, R., Mertz, F., Wong, M., Schneider, R., Amano, H., Akasaki, I., IPAP Conf. Series 1, 137 (2000); Proc. Int. Workshop on Nitride Semiconductors.
3Nishizuka, K., Funato, M., Kawakami, Y., Fujita, S., Narukawa, Y., Mukai, T., Appl. Phys. Lett. 85, 3122 (2004).
4Khatsevich, S., Rich, D.H., Zhang, X., Zhou, W., Dapkus, P.D., J. Appl. Phys. 95, 1832 (2004).
5Neubert, B., Habel, F., Brückner, P., Scholz, F., Riemann, T., Christen, J., Mater. Res. Symp. Proc. 831, E11.32.1 (2005).
6Zhang, X., Dapkus, P.D., Rich, D.H., Kim, I., Kobayashi, J.T., Kobayashi, N.P., J. Electron. Mat. 29, 10 (2000).
7Hertkorn, J., Brückner, P., Thapa, S.B., Wunderer, T., Scholz, F., Feneberg, M., Thonke, K., Sauer, R., Beer, M., Zweck, J., J. Cryst. Growth 308, 30 (2007).
8Wunderer, T., Brückner, P., Neubert, B., Scholz, F., Feneberg, M., Lipski, F., Schirra, M., Thonke, K., Appl. Phys. Lett. 89, 041121 (2006).
9Funato, M., Kondou, T., Hayashi, K., Nishiura, S., Ueda, M., Kawakami, Y., Narukawa, Y., Mukai, T., Appl. Phys. Express 1, 011106 (2008).
10Off, J., Kniest, A., Vorbeck, C., Scholz, F., Ambacher, O., J. Crystal Growth 195, 286 (1998).
11Feneberg, M., Thonke, K., J. Phys.: Condens. Matter 19, 403201 (2007).
12Feneberg, M., Lipski, F., Schirra, M., Sauer, R., Thonke, K., Wunderer, T., Brückner, P., Scholz, F., Phys. Status Solidi C 5, 2089 (2008).
13Thrush, E.J., Stagg, J.P., Gibbon, M.A., Mallard, R.E., Hamilton, B., Jowett, J.M., Allen, E.M., Mater. Sci. Eng. B 21, 130 (1993).
14Neubert, B., “GaInN/GaN LEDs auf semipolaren Seitenfacetten mittels selektiver Epitaxie hergestellter GaN-Streifen”, PhD thesis, Universität Ulm, 2008.
15Neubert, B., Brückner, P., Habel, F., Scholz, F., Riemann, T., Christen, J., Beer, M., Zweck, J., Appl. Phys. Lett. 87, 182111 (2005).
16Hiramatsu, K., Nishiyama, K., Motogaito, A., Miyake, H., Iyechika, Y., Maeda, T., Phys. Status Solidi A 176, 535 (1999).
17Nishizuka, K., Funato, M., Kawakami, Y., Narukawa, Y., Mukai, T., Appl. Phys. Lett. 87, 231901 (2005).
18Neubert, B., Habel, F., Brückner, P., Scholz, F., Schirra, M., Feneberg, M., Thonke, K., Riemann, T., Christen, J., Beer, M., Zweck, J., Moutchnik, G., Jetter, M., Phys. Status Solidi C 3, 1587 (2006).
19Neubert, B., Wunderer, T., Brückner, P., Scholz, F., Feneberg, M., Lipski, F., Schirra, M., Thonke, K., J. Cryst. Growth 298, 706 (2007).
20Wunderer, T., Lipski, F., Hertkorn, J., Brückner, P., Scholz, F., Feneberg, M., Schirra, M., Thonke, K., Chuvilin, A., Kaiser, U., Phys. Status Solidi C 5, 2059 (2008).
21Aoki, M., Yamane, H., Shimada, M., Sarayama, S., Iwata, H., Disalvo, F.J., Jpn. J. Appl. Phys. 42, 5445 (2003).
22Wunderer, T., Hertkorn, J., Lipski, F., Brückner, P., Feneberg, M., Schirra, M., Thonke, K., Knoke, I., Meissner, E., Chuvilin, A., Kaiser, U., Scholz, F., Proc. of SPIE 6894, 68940V (2008); Gallium Nitride Materials, Devices III, H. Morkoç, C.W. Litton, J.-I. Chyi, Y. Nanishi, E. Yoon, Eds.
23Bonanno, P.L., O'Malley, S.M., Sirenko, A.A., Kazimirov, A., Cai, Z., Wunderer, T., Brückner, P., Scholz, F., Appl. Phys. Lett. 92, 123106 (2008).
24Northrup, J.E., Romano, L.T., Neugebauer, J., Appl. Phys.Lett. 74, 2319 (1999).
25Scholz, F., Ottenwälder, D., Eckel, M., Wild, M., Frankowsky, G., Wacker, T., Hangleiter, A., J. Cryst. Growth 145, 242 (1994).
26Takeuchi, T., Wetzel, Ch., Yamaguchi, Sh., Sakai, H., Amano, H., Akasaki, I., Kaneko, Y., Nakagawa, S., Yamaoka, Y., Yamada, N., Appl. Phys. Lett. 73, 1691 (1998).
27Sun, Yue Jun, Brandt, O., Cronenberg, S., Dhar, S., Grahn, H.T., Ploog, K.H., Waltereit, P., Speck, J.S., Phys. Rev. B 73, 041306(R) (2003).
28Wunderer, T., Brückner, P., Hertkorn, J., Scholz, F., Beirne, G.J., Jetter, M., Michler, P., Feneberg, M., Thonke, K., Appl. Phys. Lett. 90, 171123 (2007).
29Scholz, F., Prog. Cryst. Growth Charact. 35, 243 (1997).
30Gotoh, H., Tawara, T., Kobayashi, Y., Kobayashi, N., Saitoh, T., Appl. Phys. Lett. 83, 4791 (2003).
31Feneberg, M., Lipski, F., Sauer, R., Thonke, K., Wunderer, T., Neubert, B., Brückner, P., Scholz, F., Appl. Phys. Lett. 86, 242112 (2006).
32Fuhrmann, D., Rossow, U., Netzel, C., Bremers, H., Ade, G., Hinze, P., Hangleiter, A., Phys. Status Solidi C 3, 1966 (2006).

GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets

  • Ferdinand Scholz, Thomas Wunderer, Barbara Neubert, Martin Feneberg and Klaus Thonke...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed