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Electronic properties of transition-metal dichalcogenides

Published online by Cambridge University Press:  13 July 2015

Agnieszka Kuc ,
Thomas Heine  and
Andras Kis
Agnieszka Kuc
Affiliation:
Jacobs University Bremen, Germany; a.kuc@jacobs-university.de
Thomas Heine
Affiliation:
Jacobs University Bremen, Germany; t.heine@jacobs-university.de
Andras Kis
Affiliation:
École Polytechnique Fédérale de Lausanne, Switzerland; andras.kis@epfl.ch
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Abstract

Graphene is not the only prominent example of two-dimensional (2D) materials. Due to their interesting combination of high mechanical strength and optical transparency, direct bandgap and atomic scale thickness transition-metal dichalcogenides (TMDCs) are an example of other materials that are now vying for the attention of the materials research community. In this article, the current state of quantum-theoretical calculations of the electronic and mechanical properties of semiconducting TMDC materials are presented. In particular, the intriguing interplay between external parameters (electric field, strain) and band structure, as well as the basic properties of heterostructures formed by vertical stacking of different 2D TMDCs are reviewed. Electrical measurements of MoS2, WS2, and WSe2 and their heterostructures, starting from simple field-effect transistors to more demanding logic circuits, high-frequency transistors, and memory devices, are also presented.

Keywords

MoSthin filmelectronic materialsemiconductingelectronic structuresimulation
Type
Research Article
Information
MRS Bulletin , Volume 40 , Issue 7: 2D layered transition-metal dichalcogenides , July 2015 , pp. 577 - 584
Copyright
Copyright © Materials Research Society 2015 

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