Skip to main content Accessibility help
×
Home

Atomic Layer-by-Layer Engineering of High Tc Materials and Heterostructure Devices

  • J.N. Eckstein, I. Bozovic and G.F. Virshup

Extract

Oxides exhibit most of the interesting phenomena known to occur in solid-state systems. As a class of materials they may be richer in phenomenology than any other comparable class. Oxides can be insulators, semiconductors, or metals. The copperoxide-based compounds we have studied are superconductors with the highest critical temperatures. In some oxides, electrons manifest simple single-particle transport properties, with a high mobility; in others, they show strongly correlated behavior resulting in a Mott-Hubbard transition, localization, and charge- or spin-density waves. In some oxides, electron-phonon coupling leads to polaronic transport. Others show collective states such as magnetism; in some there are large local magnetic moments that can couple to form ferromagnetic or antiferromagnetic phases that exist up to high temperatures. Yet others have large nonlinear dielectric and optical properties. In fact, it would seem there is very little that some such oxide couldn't do for or to the experimenter.

Copyright

References

Hide All
1.Goodenough, J., in Progress in Solid State Chemistry 5, edited by Reiss, H. (Pergamon Press, Oxford, 1971) p. 145.
2.Tsuda, N., Nasu, K., Yanase, A., and Siratori, K., Electronic Conduction in Oxides (Springer, Berlin, 1991).
3.Eckstein, J.N., Bozovic, I., Klausmeier-Brown, M.E., Virshup, G.F., and Rails, K.S., MRS Bulletin XVII (8) (1992), p. 27.
4.Bozovic, I., Eckstein, J.N., Klausmeier-Brown, M.E., and Virshup, G.F., Journal of Superconductivity 5 (1992) p. 19.
5.Virshup, G.F., Klausmeier-Brown, M.E., Bozovic, I., and Eckstein, J.N., Appl. Phys. Lett. 60 (1992) p. 2288.
6.Klausmeier-Brown, M.E., Virshup, G.F., Bozovic, I., and Eckstein, J.N., Appl. Phys. Lett 61 (1992) p. 2806.
7.Eckstein, J.N., Bozovic, I., and Virshup, G.F., SPIE Proc. 2157, Superconducting Superlattices and Multilayers (SPIE, Bellingham, 1994) in press.
8.Klausmeier-Brown, M.E., Eckstein, J.N., Bozovic, I., and Virshup, G.F., Appl. Phys. Lett. 60 (1992) p. 657.
9.Berkley, D.D., Johnson, B.R., Anand, N., Beauchamp, K.M., Conroy, L.E., and Goldman, A.M., Appl. Phys. Lett. 53 (1988) p. 1973.
10.Tamegai, T., Koga, K., Suzuki, K., Ichihara, M., Sakai, F., and Iye, Y., Jpn. Appl. Phys. Lett. 28 (1989) p. 112.
11.Hamilton, C.A., Kautz, R.L., Steiner, R.L., and Frances, Lloyd, L., IEEE EDL-6 (1985) p. 623.
12.Shklovskii, B.I. and Efros, A.L., Electronic Properties of Doped Semiconductors (Springer, Berlin, 1984).
13.Glazman, L.I. and Matveev, K.A., Sov. Phys. JETP. 67 (1988) p. 1276.

Atomic Layer-by-Layer Engineering of High Tc Materials and Heterostructure Devices

  • J.N. Eckstein, I. Bozovic and G.F. Virshup

Metrics

Altmetric attention score

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed