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Multiscale Modeling of Thin-Film Deposition: Applications to Si Device Processing

Published online by Cambridge University Press:  31 January 2011

F.H. Baumann ,
D.L. Chopp ,
T. Díaz de la Rubia ,
G.H. Gilmer ,
J.E. Greene ,
H. Huang ,
S. Kodambaka ,
P. O'Sullivan  and
I. Petrov
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Extract

Metallization is the back end of the integrated-circuit (IC) fabrication process where the transistor interconnections are formed. Figure 1 shows the metallized part of a static random-access memory chip. Metal lines for electrical connections (Al and Cu) in Si devices are deposited as blanket films and then etched or polished away to define the conducting lines.

Type
Research Article
Information
MRS Bulletin , Volume 26 , Issue 3: Materials Research by Means of Multiscale Computer Simulation , March 2001 , pp. 182 - 189
Copyright
Copyright © Materials Research Society 2001

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References

1Liu, R. in ULSI Technology, edited by Chang, C.Y. and Sze, S.M. (McGraw-Hill, New York, 1998) p.371.Google Scholar
2The International Technology Roadmap for Semiconductors, 1999 ed. (Semiconductor Industry Association, San Jose, CA, 1999).Google Scholar
3Haynes, T.E. guest editor, “Defects and Diffusion in Silicon Technology,” MRS Bull. 25 (6)(2000) pp. 14–50.CrossRefGoogle Scholar
4Braun, A.E. Semicond. Int. (August 1999) p.58.Google Scholar
5Chin, B.Ding, P.Sun, B.Chiang, T.Angelo, D.Hashim, I.Xu, Z., Edelstein, S. and Chen, F. Solid State Technol. (July 1998) p.141.Google Scholar
6Petrov, I.Adibi, F.Greene, J.E.Sproul, W.D. and Münz, W.-D., J.Vac. Sci. Technol., A 10 (1992) p.3283.CrossRefGoogle Scholar
7Greene, J.E.Sundgren, J.-E.Hultman, L.Petrov, I. and Bergstrom, D.B.Appl. Phys. Lett. 67 (1995) p. 2928; L., Hultman, J.-E., Sundgren, J.E., Greene, D.B., Bergstrom, and I., Petrov, J. Appl. Phys. 78 (1995) p.5395.CrossRefGoogle Scholar
8Stumpf, R. and Scheffler, M.Phys. Rev. B 53 (1996) p.5958.CrossRefGoogle Scholar
9Ercolessi, F. and Adams, J.B.Europhys. Lett. 26 (1994) p.583.CrossRefGoogle Scholar
10Oldham, W.G.Neureuther, A.R.Sung, C.Reynolds, J.L. and Nandgaonkar, S.N.IEEE Trans. Electron Devices 27 (1980) p.1455.CrossRefGoogle Scholar
11Blech, I.A. and Vander, H.A.Plas, J. Appl. Phys. 54 (1983) p.3489.CrossRefGoogle Scholar
12Osher, S. and Sethian, J.A.J. Comput. Phys. 79 (1988) p.12.CrossRefGoogle Scholar
13Sethian, J.A.Level Set Methods and Fast Marching Methods (Cambridge University Press, Cambridge, 1999).Google Scholar
14Adalsteinsson, D. and Sethian, J.A.J.Comput. Phys. 148 (1999) p.2.CrossRefGoogle Scholar
15Glimm, J., Grove, J.W.Li, X.-L.Shyue, K.-M.Zeng, Y. and Zhang, Q.SIAM J. Sci. Comput. 19 (1998) p.703.CrossRefGoogle Scholar
16Glimm, J.Simanca, S.R.Tan, D.Tangerman, F.M. and Vanderwoude, G.SIAM J. Sci. Comput. 20 (1999) p.1905.CrossRefGoogle Scholar
17Kodambaka, S.Petrova, V.Vailionis, A.Desjardins, P.Cahill, D.G.Petrov, I. and Greene, J.E.Surf. Rev. Lett. 7 (2000) p.589.CrossRefGoogle Scholar
18Kodambaka, S.Petrova, V.Vailionis, A.Desjardins, P.Cahill, D.G.Petrov, I. and Greene, J.E. Thin Solid Films (2001) in press.Google Scholar
19Chopp, D.L.J. Comput. Phys. 162 (2000) p.104.CrossRefGoogle Scholar
20Lifshitz, I.M. and Slyozov, V.V.J.Phys. Chem. Solids 19 (1961) p.35.CrossRefGoogle Scholar
21McLean, J.G.Krishnamachari, B.Peale, D.R.Chason, E.Sethna, J.P. and Cooper, B.H.Phys. Rev. B 55 (1997) p.1811.CrossRefGoogle Scholar
22Huang, H.Gilmer, G.H. and Rubia, T. Diaz de la, J.Appl. Phys. 84 (1998) p.3636.CrossRefGoogle Scholar
23Floro, J.A.Thompson, C.V.Carel, R. and Bristowe, P.D.J.Mater. Res. 9 (1994) p.2411.CrossRefGoogle Scholar
24Gilmer, G.H.Huang, H.C.Rubia, T. Diaz de la, Baumann, F.H. and Torre, J. Dalla, Thin Solid Films 365 (2000) p.189.CrossRefGoogle Scholar