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Voltage-controlled reactive magnetron sputtering of Nb-doped TiO2 films: electrical and optical properties
Published online by Cambridge University Press: 28 April 2016
Abstract
Niobium-doped TiO2 films as highly transparent conducting oxidic electrodes were prepared by reactive magnetron sputtering from a titanium target in an argon-oxygen gas flow. As-deposited films were amorphous and exhibited high resistivities ranging from 10 to 1×105 Ω cm in dependence on the deposition parameters. We stabilized the reactive magnetron sputtering deposition by adjusting the magnetron discharge voltage at a constant oxygen gas flow. The precise process control during the preparation of the as-deposited films was essential to gain low resistivities (10-3 Ω cm) and low optical absorption coefficients (α550nm < 2×103 cm-1) after annealing. These polycrystalline TiO2:Nb films on borosilicate glass show a quite high electron concentration > 1×1020 cm-3 and a high carrier mobility (≈ 8 cm2 V-1 s-1).
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- Copyright © Materials Research Society 2016