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Variations in Electric Switching and Transverse Resistance of GeTe/ Sb2Te3 Superlattices at Elevated Temperature Studied by Conductive Scanning Probe Microscopy

Published online by Cambridge University Press:  01 March 2018

Leonid Bolotov ,
Yuta Saito ,
Tetsuya Tada  and
Junji Tominaga
Leonid Bolotov*
Affiliation:
Nat. Inst. of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki305-8565Japan
Yuta Saito
Affiliation:
Nat. Inst. of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki305-8565Japan
Tetsuya Tada
Affiliation:
Nat. Inst. of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki305-8565Japan
Junji Tominaga
Affiliation:
Nat. Inst. of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki305-8565Japan
*
*(Email: bolotov.leonid@aist.go.jp)
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Abstract

Temperature-dependent variations in electric switching and transverse resistance of phase-change [(GeTe)2(Sb2Te3)]n (n=4 and 8) chalcogenide superlattice (CSL) films were studied using conductive scanning probe microscopy (SPM). Three temperature regions with different electric transport properties were recognized in point current-voltage (I-V) spectra and the surface potential maps measured with tantalum and platinum-coated SPM cantilevers. At around 80°C the switching voltage decreased abruptly from ∼2 V to 0.5 V and the thermal coefficient of resistance changes its sign, indicating different carrier transport mechanisms. The observed changes correlated with decrease in the surface potential by ∼150 meV from 25 to 150°C. The results were ascribed to an opening of the CSL electronic band gap near the Fermi energy caused by thermal stress, which led to the transition from a Dirac-like semimetal to a narrow-gap semiconductor.

Keywords

scanning probe microscopy (SPM)phase transformationelectrical properties
Type
Articles
Information
MRS Advances , Volume 3 , Issue 5: Electronics, Magnetics and Photonics , 2018 , pp. 241 - 246
Copyright
Copyright © Materials Research Society 2018 

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References

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