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TCAD simulation of a single Monolithic Active Pixel Sensors based on High Voltage CMOS technology

Published online by Cambridge University Press:  02 May 2018

Tuan A. Bui ,
Geoffrey K. Reeves ,
Patrick W. Leech ,
Anthony S. Holland  and
Geoffrey Taylor
Tuan A. Bui*
Affiliation:
School of Engineering, RMIT University, Melbourne, VIC3000, Australia
Geoffrey K. Reeves
Affiliation:
School of Engineering, RMIT University, Melbourne, VIC3000, Australia
Patrick W. Leech
Affiliation:
School of Engineering, RMIT University, Melbourne, VIC3000, Australia
Anthony S. Holland
Affiliation:
School of Engineering, RMIT University, Melbourne, VIC3000, Australia
Geoffrey Taylor
Affiliation:
School of Physics, The University of Melbourne, Melbourne, VIC3010, Australia
*
*(Email: s3326157@student.rmit.edu.au)
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Abstract

A model of a High Voltage CMOS (HV-CMOS) Monolithic Active Pixel Sensor (MAPS) has been modelled using Technology Computer Aided Design (TCAD). The model has incorporated both the active region and the on-pixel readout circuits which were comprised of a source follower amplifier and an integrated charge amplifier. The simulation has examined the electrical characteristics and response output of a HV-CMOS MAPS sensor using typical dimensions, levels of doping in the structural layers and bias conditions for this sensor. The performance of two alternate designs of amplifier have been examined as a function of the operating parameters. The response of the sensor to the incidence of Minimum Ionizing Particles (MIPs) at different energies has been included in the model.

Keywords

sensorsimulation
Type
Articles
Information
MRS Advances , Volume 3 , Issue 51: Energy Materials and Technologies , 2018 , pp. 3053 - 3059
Copyright
Copyright © Materials Research Society 2018 

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