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Surface Smoothing Effects of Materials Used in Underlayer of MTJ with Gas Cluster Ion Beams

Published online by Cambridge University Press:  01 February 2016

Noriaki Toyoda
Noriaki Toyoda*
Affiliation:
Graduate school of engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo, 671-2280, JAPAN.
*
*(Email: ntoyoda@incub.u-hyogo.ac.jp)
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Abstract

Surface smoothing of Ru used as underlayer of magnetic tunneling junctions (MTJ) in magneto-resistive random access memory (MRAM) was carried out with gas cluster ion beam (GCIB) in order to improve device characteristics. For Ru films, surface smoothing with 5 kV N2-GCIB irradiation was effective, and CoFe films deposited on smoothed Ru surface also showed smooth surface. From the hysteresis loop measurements of MTJ formed on smoothed Ru with N2-GCIB, it showed improvement of inter-layer coupling magnetic field (Hin) with decreasing the surface roughness of underlayer Ru. It is expected that surface roughness of MgO in MTJ was also improved by smoothing of underlayer Ru with N2-GCIB.

Keywords

ion-beam processingmagnetoresistance (magnetic)Ru
Type
Articles
Information
MRS Advances , Volume 1 , Issue 5: Electronics and Photonics , 2016 , pp. 357 - 362
Copyright
Copyright © Materials Research Society 2016 

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References

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