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Study on the Temperature Dependency Effect of Thermal Coefficient of Resistance in Amorphous Silicon for Uncooled Microbolometer Application

  • Junkyo Jeong (a1), Byeongjun Jeong (a1), Jaeseop Oh (a2) and Gawon Lee (a1)

Abstract

In this paper, we studied the temperature dependency effect of thermal coefficient of resistance (TCR) in amorphous silicon (a-Si) on the properties of uncooled microbolometer with a-Si as a resistance layer by simulation. The temperature of the microbolometer rises during the operation mainly due to the heat generated by Joule heating as well as IR radiation. Generally, the TCR of a-Si is treated as a constant for the simplicity but the absolute value of TCR has been reported to decrease as the temperature increases. Therefore, to improve the device characteristics, the effect of temperature dependency of TCR in a-Si should be considered carefully in the range of the operating temperature. The responsivities of microbolometer are simulated according to the width of the resistance layer (W) with TCR as a function of temperature, which shows that the optimal W condition is affected by the TCR value changed by the temperature.

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Corresponding author

*(Email: gawon@cnu.ac.kr)

References

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[1]Liger, M., Uncooled Carbon Microbolometer Imager, (California Institute of Technology, 2006).
[2]Niklaus, F., Vieider, C., and Jakobsen, H., MEMS/MOEMS tech. appl. III 6836, 68360D (2008).
[3]Bhan, R. K., Saxena, R. S., Jalwania, C. R., and Lomash, S. K., Def. Sci. J. 59, 580589 (2009).
[4]Kylili, A., Fokaides, P. A., Christou, P., Kalogirou, S. A., Appl. Energy 134, 531549 (2014).
[5]Rogalski, A., Prog. Quant. Elect. 27, 59210 (2003).
[6]Sizov, F. F., Phys. Quan. Elect. Optoelec. 3, 5258 (2000).
[7]Tezcan, D. S., Kocer, F., and Akin, T., Int. Conf. on Solid-State Sensors & Actuators (TRANSDUCERS’99) 610613 (1999).
[8]Bhan, R. K., Saxena, R. S., Jalwania, C. R., and Lomash, S. K., Def. Sci. J. 59, 580589 (2009).
[9]Ha, W. H., kang, H. K., Kim, M. C., Moon, S., Oh, M. H., Kim, D. H., and Choi, J. S., The Korean Institute of Electrical Engineers 11371139 (1999).
[10]Battal, E., Bolat, S., Tanrikulu, M. Y., Okyay, A. K., and Akin, T., phys. Stat. sol. 211, 24752482 (2014).
[11]Lee, M. H., Kang, Y. H., Jung, E. S., Kang, T. Y., and Kang, E. G., The Korean Institute of Electrical and Electronic Material Engineers 10, 238239 (2009).
[12]Abtew, T. A., Zhang, M., and Drabold, D. A., Phys. Rev. B. 76, 045212 (2007).
[13]Bergman, T.L., Incropera, F.P., DeWitt, D.P. and Lavine, A.S., Fundamentals of heat and mass transfer, (John Wiley & Sons, 2011).
[14]Milonni, P.W., The quantum vacuum: an introduction to quantum electrodynamics, (Academic press, 2013).
[15]Yon, J.J., Biancardini, L., Tissot, J.L., Letellier, L., Advanced Microsystems for Automotive Applications 2003, (Springer, 2003).
[16]Kruse, P.W., and Skatrud, D.D., Uncooled infrared imaging arrays and systems, p.62 (Academic Press, 1997).

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